UNISONIC TECHNOLOGIES CO., LTD 12N25V Power MOSFET 12A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N25V is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N25V is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. FEATURES * ID=12A * VDS = 250V * RDS(ON)<0.5Ω @ VGS=10V, ID=12A * High switching speed * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N25VL-TA3-T 12N25VG-TA3-T 12N25VL-TN3-R 12N25VG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel 1 of 6 QW-R502-917.B 12N25V Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-917.B 12N25V Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER RATINGS UNIT 250 V ±20 V Continuous (TC=25°C) 12 A Drain Current Pulsed (Note 2) 48 A Single Pulsed Avalanche Energy 474 mJ Peak Diode Recovery dv/dt 7.5 V/ns TO-220 73 W Power Dissipation PD TO-252 83 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Drain-Source Voltage Gate-Source Voltage THERMAL DATA Junction to Ambient Junction to Case SYMBOL VDSS VGSS ID IDM EAS dv/dt PARAMETER TO-220 TO-252 TO-220 TO-252 SYMBOL θJA θJC RATINGS 62.5 100 1.7 1.5 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 250 V Drain-Source Leakage Current IDSS VDS=250V, VGS=0V 1 µA Forward VGS=+20V, VDS=0V +100 nA Gate- Source Leakage Current IGSS -100 nA Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 1.0 2.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=12A 0.34 0.5 Ω DYNAMIC PARAMETERS Input Capacitance CISS 3000 pF VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 900 pF Reverse Transfer Capacitance CRSS 400 6 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 14 ns Rise Time tR 80 ns VDD=200V, ID=12A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) 90 ns 80 ns Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 12 A Maximum Body-Diode Pulsed Current ISM 48 A Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V 1.4 V Reverse Recovery Time trr 210 ns IS=12A, VGS=0V, dIF/dt=100A/μs Reverse Recovery Charge Qrr 1.5 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-917.B 12N25V Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-917.B 12N25V Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS VGS 90% 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-917.B 12N25V Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 200 150 100 50 50 0 0 0 0.5 1 2.5 3 3.5 1.5 2 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 75 225 300 375 150 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-917.B