Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT6N10Z
Power MOSFET
6.0A, 100V N-CHANNEL
POWER MOSFET

1
DESCRIPTION
TO-252
The UTC UTT6N10Z is an N-channel enhancement mode Power
FET, it uses UTC’s advanced technology to provide customers a
minimum on-state resistance, high switching speed and ultra low
gate charge.
The UTC UTT6N10Z is usually used in DC-DC Converters.
1

SOT-223
FEATURES
* RDS(on) < 108mΩ @ VGS = 10V, ID=3A
* High Switching Speed

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT6N10ZG-AA3-R
UTT6N10ZL-TN3-R
UTT6N10ZG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
SOT-223
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tape Reel
MARKING
SOT-223
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
TO-252
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UTT6N10Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
Continuous
6
A
Drain Current
Pulsed
24
A
Single Pulsed Avalanche Energy (Note 3)
12
mJ
Peak Diode Recovery dv/dt (Note 5)
4.2
V/ns
Power Dissipation (TA=25°C)
SOT-223
0.8
W
PD
(Note 1)
1.25
W
TO-252
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
EAS
dv/dt
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 1)
Junction to Case
SYMBOL
SOT-223
TO-252
SOT-223
TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
150
100
12
7.5
UNIT
°C/W
°C/W
°C/W
°C/W
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UTT6N10Z

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
100
VDS=VGS, ID=250µA
VGS=10V, ID=3A
VGS=4.5V, ID=1A
1.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=50V, ID=1.3A
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, VGS=10V,
R
Turn-OFF Delay Time
tD(OFF)
GEN=25Ω
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Source Current Pulsed
ISM
Drain-Source Diode Forward Voltage
VSD
IS=6A, VGS=0V (Note 2)
Reverse Recovery Time
trr
IS=6A, VGS=0V,
dIF/dt=100A/µs (Note 1)
Reverse Recovery Charge
Qrr
Notes: 1. θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where
reference is defined as the solder mounting surface of the drain pins.
θJC is guaranteed by design while θJA is determined by the user’s board deign.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
3. Starting TJ = 25°C, L =11mH, IAS =6A, VDD = 90V, VGS=10V.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
+10
-10
V
µA
µA
µA
90
95
3.0
108
153
V
mΩ
mΩ
720
85
33
900
65
60
pF
pF
pF
28
3.9
5.3
30
50
280
80
nC
nC
nC
ns
ns
ns
ns
6
24
1.3
A
A
0.8
V
70
ns
115
nC
the case thermal
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Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
200
150
100
50
0
200
150
100
50
0
25
50
75
100
0
0
125
3.6
Drain Current, ID (A)
3.0
VGS=10V, ID=3A
2.4
1.8
1.2
0.6
0
0
0.05 0.1 0.15 0.2 0.25 0.3
Drain to Source Voltage, VDS (V)
Coutinuous Drain-Soarce Current, ISD (A)
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
0.5
1.0
1.5
2.0
2.5
3.0
Gate Threshold Voltage, VTH (V)
3.6
Coutinuous Drain-Soarce Current vs.
Source to Drain Voltage
3.0
2.4
1.8
1.2
0.6
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-921.E
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