Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N80Z
Power MOSFET
7A, 800V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N80Z is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 7N80Z is universally applied in high efficiency switch
mode power supply.

FEATURES
* RDS(on)[email protected] =10V
* High switching speed
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N80ZL-TF1-T
7N80ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-929, A
7N80Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDSS
800
Gate-Source Voltage
VGSS
±20
Continuous
ID
7
Drain Current
Pulsed (Note 1)
IDM
26.4
Single Pulsed (Note 2)
EAS
580
Avalanche Energy
Repetitive (Note 1)
EAR
16.7
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
Power Dissipation
PD
52
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-55~+150
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=25mH, IAS=6.6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

UNIT
V
V
A
A
mJ
mJ
V/ns
W
°C
°C
damaged.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
2.4
UNIT
°C/W
°C/W
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QW-R502-929, A
7N80Z

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
800
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
Forward
VDS=0V ,VGS=20V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3.3A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=640V, VGS=10V, ID=6.6A
Gate-Source Charge
QGS
(Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=400V, ID=6.6A, RG=25Ω
(Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =6.6A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=6.6A,
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
MAX
UNIT
10
100
5
-5
V
V/°C
µA
µA
µA
µA
5.0
1.8
V
Ω
0.93
1.4
1290 1680
120
155
10
13
pF
pF
pF
27
8.2
11
35
100
50
60
nC
nC
nC
ns
ns
ns
ns
35
80
210
110
130
6.6
26.4
1.4
650
7.0
A
A
V
ns
μC
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QW-R502-929, A
7N80Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS

VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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QW-R502-929, A
7N80Z

Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-929, A
7N80Z
Power MOSFET
Drain Current,ID (µA)
Drain Current, ID (µA)
Drain Current, ID (A)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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