Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N70Z
Preliminary
Power MOSFET
6.0A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N70Z is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC 6N70Z is universally applied in high efficiency
switch mode power supply.

FEATURES
* RDS(ON)=1.9Ω @ VGS=10V, ID=3A
* High switching speed


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70ZL-T82-T
6N70ZG-T82-T
6N70ZL-TM3-T
6N70ZG-TM3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
SOT-82
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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QW-R502-A02. a.
6N70Z

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage (Note 2)
RATINGS
UNIT
700
V
±20
V
TC=25°C
6
A
Continuous
ID
Drain Current
TC=100°C
3.8
A
Pulsed
IDM
24
A
Avalanche Current (Note 2)
IAR
6
A
Single Pulsed (Note 3)
EAS
300
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.5
V/ns
SOT-82
75
W
Power Dissipation
TO-251
55
W
PD
SOT-82
0.60
W/°C
Linear Derarting Factor
TO-251
0.44
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

SYMBOL
VDSS
VGSS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
SOT-82
TO-251
SOT-82
TO-251
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJc
RATINGS
62.5
110
1.67
2.27
UNIT
°С/W
°С/W
°С/W
°С/W
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6N70Z

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
∆BVDSS/∆TJ ID=250µA
VDS=700V
IDSS
VDS=560V, TC=125°C
VGS=+20V, VDS=0V
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA, VDS=5V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
VGS=0~10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VDD=50V, IG=100μA,
Gate to Source Charge
QGS
ID=1.3A (Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral reverse pn-diode in
Maximum Body-Diode Pulsed Current
the MOSFET
ISM
(Note 3)
Drain-Source Diode Forward Voltage
VSD
IS=6A, VGS=0V, TJ = 25°C
(Note 2)
Body Diode Reverse Recovery Time
trr
IF=6A, dIF/dt=100A/µs,
TJ = 25°C
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
700
25
250
5
-5
V
V/°C
µA
µA
µA
µA
1.65
4.0
1.9
V
Ω
900
90
18
1200
115
55
pF
pF
pF
40
65
140
60
26
6.9
6.4
70
90
165
85
30
ns
ns
ns
ns
nC
nC
nC
6
A
24
A
1.4
V
0.79
2.0
440
4.05
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS

Same Type
as DUT
12V
200nF
50kΩ
VDS
300nF
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
RG
90%
RD
VDS
VGS
10V
10%
DUT
VGS
td(ON)
tR
td(OFF) tF
tON
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
tOFF
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N70Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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