Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF730-E
Power MOSFET
5.5 Amps, 400 Volts
N-CHANNEL POWER MOSFET

DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications such as switching regulators, switching
converters, solenoid, motor drivers, relay drivers.
1
TO-220

FEATURES
* RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A
* Avalanche Energy Specified
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Capability
* Linear Transfer Characteristics
* High Input Impedance

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF730L-TA3-T
UF730G-TA3-T
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd.
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20kΩ) (TJ =25°C ~125°C)
SYMBOL
RATINGS
UNIT
VDSS
400
V
VDGR
400
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
5.5
A
Pulsed Drain Current (Note 1)
IDM
22
A
Single Pulse Avalanche Energy (Note 2)
EAS
300
mJ
Power Dissipation
PD
73
W
°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
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SYMBOL
θJA
θJC
RATINGS
62.5
1.71
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
On-State Drain Current (Note 3)
SYMBOL
BVDSS
ID(ON)
TEST CONDITIONS
VGS=0V, ID=250μA
VDS>ID(ON)×RDS(ON)MAX,
VGS=10V
VDS=Rated BVDSS, VGS=0V
VGS=±20V
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=30V, ID≈0.5A,
Turn-On Rise Time
tR
VGS=0~10V, RG=25Ω
Turn-Off Delay Time
tD(OFF)
(Note 3, 4)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VGS=50V, ID=1.3A,
Gate-Source Charge
QGS
VDS=10V, IG=100μA
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD=5.5A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
ISD = 5.5A, dISD/dt = 100A/μs
(Note 3)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
4. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
400
V
5.5
A
2.0
25
±100
μA
nA
4.0
0.69 0.85
V
Ω
615
115
45
630
125
55
pF
pF
pF
98
104
238
148
31
5.5
10
120
125
250
160
35
ns
ns
ns
ns
nC
nC
nC
1.6
V
5.5
A
22
A
660
4.3
ns
μC
140 300
0.93 2.1
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)

Power MOSFET
Sturation Characteristics
Output Characteristics
10
VGS=10
V GS=6.0V
6
VGS=5.5V
4
VGS=5.0V
Pulse Duration=80μs VGS=10V
Duty Cycle = 0.5% Max
8
Drain Current, ID (A)
Drain Current, ID (A)
8
10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VGS=6.0V
6
VGS=5.5V
4
VGS=5.0V
2
2
VGS=4.5V
VGS=4.5V
0
VGS=4.0V
VGS=4.0V
0
40
80
120
160
0
200
0
40
80
120
160
200
Drain to Source Voltage, VDS (V)
Drain Current, IDR (A)
Drain to Source on Resistance, RDS (DN) (Ω)
Drain to Source Voltage, VDS (V)
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Power MOSFET
Capacitance, C (pF)
Source to Drain Current, ISD (A)
Gate to Source Voltage, VGS (V)
TYPICAL CHARACTERISTICS

UTC assum es no responsibility for equipm ent failures that result from using products at values that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
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