Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N65-S
Power MOSFET
4A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N65-S is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < 2.9Ω @ VGS = 10V, ID = 2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
4N65L-TN3-T
4N65G-TN3-T
TO-252
4N65G-K08-5060-R
DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source

1
G
G
S
2
D
D
S
Pin Assignment
3 4 5 6
S - S - S G D D
7
D
8
D
Packing
Tube
Tape Reel
Tape Reel
MARKING
TO-220F1 / TO-252
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5×6)
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4N65-S

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
4.0
A
Drain Current
Pulsed (Note2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note3)
EAS
150
mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
4.5
V/ns
TO-220F1
36
W
Power Dissipation
TO-252
PD
50
W
DFN-8(5×6)
30
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 18.75mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
PACKAGE
SYMBOL
RATINGS
TO-220F1
62.5
Junction to Ambient
TO-252
θJA
110
DFN-8(5×6)
75 (Note)
TO-220F1
3.47
Junction to Case
TO-252
θJC
2.5
DFN-8(5×6)
4.17 (Note)
Note: Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
UNISONIC TECHNOLOGIES CO., LTD
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UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
10
μA
100
nA
Forward
VGS = 30 V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2A
2.9
Ω
DYNAMIC CHARACTERISTICS
420 550
pF
Input Capacitance
CISS
VDS = 25 V, VGS = 0V,
Output Capacitance
COSS
40
60
pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
4
8
pF
SWITCHING CHARACTERISTICS10
Turn-On Delay Time
tD(ON)
60
ns
Turn-On Rise Time
tR
25
ns
VDS = 30 V, ID = 0.5 A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
125
ns
Turn-Off Fall Time
tF
30
ns
Total Gate Charge
QG
15
20
nC
VDS= 50 V,ID= 1.3 A,
Gate-Source Charge
QGS
5
nC
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
2
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4A
1.4
V
Maximum Continuous Drain-Source
IS
4
A
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
16
A
Forward Current
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4N65-S

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDD
VGS
RG
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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