UNISONIC TECHNOLOGIES CO., LTD 7N65-M Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 1.2Ω @ VGS = 10V, ID = 3.7A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 7N65L-TA3-T 7N65G-TA3-T TO-220 7N65L-TF3-T 7N65G-TF3-T TO-220F 7N65L-TF1-T 7N65G-TF1-T TO-220F1 7N65L-TF2-T 7N65G-TF2-T TO-220F2 Note: Pin Assignment: G: Gate D: Drain S: Source 7N65L-TA3-T (1) Packing Type (2) Package Type (3) Green Package Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube (1) T: Tube (2) TA3: TO-220, TF1: TO220-F1, TF2: TO-220F2 TF3: TO-220F (3) L: Lead Free, G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A28.C 7N65-M Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 530 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 142 Power Dissipation TO-220F/TO-220F1 PD 48 W TO-220F2 50 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.88 2.6 2.5 UNIT °C/W °C/W 2 of 6 QW-R502-A28.C 7N65-M Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS=0V, ID=250μA 650 V VDS=650V, VGS=0V 1 μA Drain-Source Leakage Current IDSS VDS=520V, VGS=0V, TC=125°C 100 μA Forward VGS=30V, VDS=0V 100 nA Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C 0.67 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.7A 1.07 1.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 700 1400 pF Output Capacitance COSS VDS=25V, VGS=0V, f=1.0 MHz 100 200 pF Reverse Transfer Capacitance CRSS 20 40 pF Gate Resistance RG VDS =0V, VGS =0V, f =1MHz 0.8 5.0 Ω SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 72 95 ns Turn-On Rise Time tR 58 75 ns VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 308 350 ns Turn-Off Fall Time tF 64 80 ns 130 140 nC Total Gate Charge QG VDS=520V, ID=7.4A, VGS=10V Gate-Source Charge QGS 18 nC (Note 1, 2) Gate-Drain Charge QGD 23 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode IS 7.4 A Forward Current Maximum Pulsed Drain-Source Diode ISM 29.6 A Forward Current Reverse Recovery Time trr 320 ns VGS = 0V, IS = 7.4 A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR 2.4 μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-A28.C 7N65-M Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A28.C 7N65-M Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VGS RG VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-A28.C 7N65-M Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A28.C