Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N65-M
Power MOSFET
7.4A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N65-M is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.

FEATURES
* RDS(ON) < 1.2Ω @ VGS = 10V, ID = 3.7A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
7N65L-TA3-T
7N65G-TA3-T
TO-220
7N65L-TF3-T
7N65G-TF3-T
TO-220F
7N65L-TF1-T
7N65G-TF1-T
TO-220F1
7N65L-TF2-T
7N65G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate
D: Drain
S: Source
7N65L-TA3-T
(1) Packing Type
(2) Package Type
(3) Green Package

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
(1) T: Tube
(2) TA3: TO-220, TF1: TO220-F1, TF2: TO-220F2
TF3: TO-220F
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-A28.C
7N65-M

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.4
A
7.4
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
29.6
A
530
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
142
Power Dissipation
TO-220F/TO-220F1
PD
48
W
TO-220F2
50
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATINGS
62.5
0.88
2.6
2.5
UNIT
°C/W
°C/W
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7N65-M

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
VGS=0V, ID=250μA
650
V
VDS=650V, VGS=0V
1
μA
Drain-Source Leakage Current
IDSS
VDS=520V, VGS=0V, TC=125°C
100 μA
Forward
VGS=30V, VDS=0V
100 nA
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
0.67
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.7A
1.07 1.2
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
700 1400 pF
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1.0 MHz
100 200 pF
Reverse Transfer Capacitance
CRSS
20
40
pF
Gate Resistance
RG
VDS =0V, VGS =0V, f =1MHz
0.8 5.0
Ω
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
72
95
ns
Turn-On Rise Time
tR
58
75
ns
VDD =325V, ID =7.4A, RG =25Ω
(Note
1,
2)
Turn-Off Delay Time
tD(OFF)
308 350 ns
Turn-Off Fall Time
tF
64
80
ns
130 140 nC
Total Gate Charge
QG
VDS=520V, ID=7.4A, VGS=10V
Gate-Source Charge
QGS
18
nC
(Note 1, 2)
Gate-Drain Charge
QGD
23
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7.4 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
7.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
29.6
A
Forward Current
Reverse Recovery Time
trr
320
ns
VGS = 0V, IS = 7.4 A,
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
2.4
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2µF
50kΩ
0.3µF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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7N65-M
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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