Datasheet

UNISONIC TECHNOLOGIES CO., LTD
30N06V-Q
Preliminary
Power MOSFET
60V, 30A N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 30N06V-Q is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.

FEATURES
* RDS(ON) < [email protected] = 10 V, ID=15A
* Fast switching capability
* Avalanche energy specified

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
30N06VL-TM3-T
30N06VG-TM3-T
TO-251
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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30N06V-Q

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
TC = 25°C
30
A
Continuous Drain Current
ID
TC = 100°C
21.3
A
Pulsed Drain Current (Note 2)
IDM
120
A
250
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
8
mJ
Power Dissipation
PD
46
W
Junction Temperature
TJ
+150
°C
Operation Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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SYMBOL
θJA
θJC
RATING
110
2.85
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
60
V
VDS = 60 V, VGS = 0 V
10
μA
100 nA
Forward
VGS = 20V, VDS = 0 V
Gate-Source Leakage Current
IGSS
Reverse
VGS = -20V, VDS = 0 V
-100 nA
ID =250μA,
0.06
V/°C
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
1.6
2.4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 15 A
40
mΩ
DYNAMIC CHARACTERISTICS
800
pF
Input Capacitance
CISS
VGS = 0 V, VDS = 25 V,
Output Capacitance
COSS
300
pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
50
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
30
ns
Turn-On Rise Time
tR
50
ns
VDD = 30V, ID =15 A, VGS=10V
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
280
ns
Turn-Off Fall Time
tF
120
ns
Total Gate Charge
QG
30
nC
VDS = 60V, VGS = 10 V,
Gate-Source Charge
QGS
5
nC
ID = 24A (Note 1, 2)
Gate-Drain Charge
QGD
8
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 30A
1.4
V
Maximum Continuous Drain-Source Diode
IS
30
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
120
A
Forward Current
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit
12V
Same Type
as D.U.T.
50kΩ
0.2μF
Switching Waveforms
QG
10V
0.3μF
VDS
QGS
QGD
VGS
DUT
1mA
VG
Charge
Gate Charge Test Circuit
Unclamped Inductive Switching Test Circuit
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Gate Charge Waveform
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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