UNISONIC TECHNOLOGIES CO., LTD 30N06V-Q Preliminary Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06V-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. FEATURES * RDS(ON) < 40mΩ@VGS = 10 V, ID=15A * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 30N06VL-TM3-T 30N06VG-TM3-T TO-251 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S Packing Tube 1 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V TC = 25°C 30 A Continuous Drain Current ID TC = 100°C 21.3 A Pulsed Drain Current (Note 2) IDM 120 A 250 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 8 mJ Power Dissipation PD 46 W Junction Temperature TJ +150 °C Operation Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repeativity rating: pulse width limited by junction temperature 3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING 110 2.85 UNIT °C/W °C/W 2 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 60 V VDS = 60 V, VGS = 0 V 10 μA 100 nA Forward VGS = 20V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -20V, VDS = 0 V -100 nA ID =250μA, 0.06 V/°C Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 1.6 2.4 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 40 mΩ DYNAMIC CHARACTERISTICS 800 pF Input Capacitance CISS VGS = 0 V, VDS = 25 V, Output Capacitance COSS 300 pF f = 1MHz Reverse Transfer Capacitance CRSS 50 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 30 ns Turn-On Rise Time tR 50 ns VDD = 30V, ID =15 A, VGS=10V (Note 1, 2) Turn-Off Delay Time tD(OFF) 280 ns Turn-Off Fall Time tF 120 ns Total Gate Charge QG 30 nC VDS = 60V, VGS = 10 V, Gate-Source Charge QGS 5 nC ID = 24A (Note 1, 2) Gate-Drain Charge QGD 8 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V Maximum Continuous Drain-Source Diode IS 30 A Forward Current Maximum Pulsed Drain-Source Diode ISM 120 A Forward Current Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 1mA VG Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-A29. a 30N06V-Q Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A29. a