UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30NP30 Power MOSFET DUAL POWER MOSFET (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UTT30NP30 is a dual power MOSFET. it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low capacitance and low gate charge, etc. The UTC UTT30NP30 is suitable for CPU Power Delivery and DC−DC Converters, etc. 1 TO-252-4 FEATURES * N-Channel: 30A, 20V RDS(on)<15mΩ @VGS=10V, ID=30A RDS(on)<18mΩ @VGS=4.5V, ID=30A P-Channel: -30A, -25V RDS(on)<25mΩ @VGS= -10V, ID= -30A RDS(on)<24mΩ @VGS= -4.5V, ID= -30A * Low capacitance SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT30NP30L-TN4-R UTT30NP30G-TN4-R TO-252-4 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 S1 Pin Assignment 2 3 4 G1 D S2 5 G2 Packing Tape Reel 1 of 5 QW-R502-A40.b UTT30NP30 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-A40.b UTT30NP30 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) RATINGS UNIT N-CHANNEL P-CHANNEL Drain-Source Voltage VDSS 20 -25 V Gate-Source Voltage VGSS ±8 ±20 V ID 30 -30 A Continuous TA=25°C Drain Current Pulsed (Note) IDM 120 -120 A Power Dissipation PD 3.1 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL DATA PARAMETER Junction to Ambient SYMBOL θJA RATINGS 40 UNIT C/W ELECTRICAL CHARACTERISTICS(TJ=25°C unless otherwise noted) N-channel PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA Drain-Source Leakage Current IDSS VDS=20V, VGS=0V, TJ=25°C Forward VGS=+8V, VGS=0V Gate-Source Leakage Current IGSS Reverse VGS=-8V, VGS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA VGS=10V, ID=30A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=4.5V, ID=30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=20V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG Gate to Source Charge QGS VGS=10V, VDS=16V, ID=30A Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS=10V, ID=1A VGS=10V, RG=3.3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note 2) VSD ISD=30A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 20 V 1.0 µA +100 nA -100 nA 0.5 1.2 15 18 V mΩ mΩ 1500 260 260 pF pF pF 160 170 5.5 10.5 31 38 57 62 458 510 234 270 nC nC nC nS nS nS nS 0.9 1.25 V 3 of 5 QW-R502-A40.b UTT30NP30 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) P-Channel PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA Drain-Source Leakage Current IDSS VDS=-24V, VGS=0V, TJ=25°C Forward VGS=+25V, VGS=0V Gate-Source Leakage Current IGSS Reverse VGS=-25V, VGS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-30A Static Drain-Source On-State Resistance RDS(ON) (Note 2) VGS=-4.5V, ID=-30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 2) QG VGS=-10V, VDS=-20V, ID=-30A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR VDS= -12.5V, ID= -1A VGS= -10V, RG=3.3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note 2) VSD IS= -30A Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature. 2. N-CH, P-CH are same, mounted on 2oz FR4 board t≦10s. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -25 -1 -1.5 -1.0 +100 -100 V µA nA nA -3 25 34 V mΩ mΩ 1500 270 230 140 5.4 8.7 34 42 308 173 pF pF pF 160 42 48 330 220 nC nC nC nS nS nS nS -1.2 V 4 of 5 QW-R502-A40.b UTT30NP30 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-A40.b