Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT30NP30
Power MOSFET
DUAL POWER MOSFET
(N-CHANNEL/P-CHANNEL)

DESCRIPTION
The UTC UTT30NP30 is a dual power MOSFET. it uses UTC’s
advanced technology to provide customers with a minimum on-state
resistance, low capacitance and low gate charge, etc.
The UTC UTT30NP30 is suitable for CPU Power Delivery and
DC−DC Converters, etc.

1
TO-252-4
FEATURES
* N-Channel: 30A, 20V
RDS(on)<15mΩ @VGS=10V, ID=30A
RDS(on)<18mΩ @VGS=4.5V, ID=30A
P-Channel: -30A, -25V
RDS(on)<25mΩ @VGS= -10V, ID= -30A
RDS(on)<24mΩ @VGS= -4.5V, ID= -30A
* Low capacitance

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT30NP30L-TN4-R
UTT30NP30G-TN4-R
TO-252-4
Note: Pin Assignment: G: Gate
D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1
S1
Pin Assignment
2
3
4
G1
D
S2
5
G2
Packing
Tape Reel
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UTT30NP30

Preliminary
Power MOSFET
MARKING
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UTT30NP30

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
RATINGS
UNIT
N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDSS
20
-25
V
Gate-Source Voltage
VGSS
±8
±20
V
ID
30
-30
A
Continuous
TA=25°C
Drain Current
Pulsed (Note)
IDM
120
-120
A
Power Dissipation
PD
3.1
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER

SYMBOL
THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
θJA
RATINGS
40
UNIT
C/W
ELECTRICAL CHARACTERISTICS(TJ=25°C unless otherwise noted)
N-channel
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V, TJ=25°C
Forward
VGS=+8V, VGS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-8V, VGS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
Static Drain-Source On-State Resistance
RDS(ON)
(Note 2)
VGS=4.5V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=20V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
Gate to Source Charge
QGS
VGS=10V, VDS=16V, ID=30A
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
VDS=10V, ID=1A
VGS=10V, RG=3.3Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
ISD=30A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
20
V
1.0 µA
+100 nA
-100 nA
0.5
1.2
15
18
V
mΩ
mΩ
1500
260
260
pF
pF
pF
160 170
5.5
10.5
31
38
57
62
458 510
234 270
nC
nC
nC
nS
nS
nS
nS
0.9
1.25
V
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
P-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V, TJ=25°C
Forward
VGS=+25V, VGS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-25V, VGS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
VGS=-10V, ID=-30A
Static Drain-Source On-State Resistance
RDS(ON)
(Note 2)
VGS=-4.5V, ID=-30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=-10V, VDS=-20V, ID=-30A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
VDS= -12.5V, ID= -1A
VGS= -10V, RG=3.3Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
IS= -30A
Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature.
2. N-CH, P-CH are same, mounted on 2oz FR4 board t≦10s.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
-25
-1
-1.5
-1.0
+100
-100
V
µA
nA
nA
-3
25
34
V
mΩ
mΩ
1500
270
230
140
5.4
8.7
34
42
308
173
pF
pF
pF
160
42
48
330
220
nC
nC
nC
nS
nS
nS
nS
-1.2
V
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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