Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PXTA14
NPN Darlington transistor
Product data sheet
Supersedes data of 1999 Apr 14
2004 Dec 09
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
FEATURES
PINNING
• High current (max. 500 mA)
PIN
• Low voltage (max. 30 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• High input impedance preamplifiers.
DESCRIPTION
3
NPN Darlington transistor in a SOT89 plastic package.
PNP complement: PXTA64.
2
TR1
TR2
MARKING
MARKING CODE(1)
TYPE NUMBER
PXTA14
3
*1N
2
1
1
sym087
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
PXTA14
2004 Dec 09
NAME
DESCRIPTION
VERSION
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCES
collector-emitter voltage
VBE = 0 V
−
30
V
VEBO
emitter-base voltage
open collector
−
10
V
IC
collector current (DC)
−
500
mA
ICM
peak collector current
−
1
A
IB
base current (DC)
−
200
mA
Ptot
total power dissipation
−
1.3
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth(j-a)
thermal resistance from junction to ambient
Rth(j-s)
thermal resistance from junction to solder point
VALUE
UNIT
96
K/W
16
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0 A; VCB = 30 V
−
100
nA
ICES
collector-emitter cut-off current
VBE = 0 V; VCE = 30 V
−
100
nA
IEBO
emitter cut-off current
IC = 0 A; VEB = 10 V
−
100
nA
hFE
DC current gain
IC = 10 mA; VCE = 5 V; (see Fig.2)
10 000
−
IC = 100 mA; VCE = 5 V; (see Fig.2)
20 000
−
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
−
1.5
V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
−
1.5
V
VBEon
base-emitter on-state voltage
IC = 100 mA; VCE = 5 V
−
2
V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
125
−
MHz
2004 Dec 09
3
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
MGD837
80000
handbook, full pagewidth
hFE
60000
40000
20000
0
10−1
1
10
VCE = 2 V.
Fig.2 DC current gain; typical values.
2004 Dec 09
4
102
IC (mA)
103
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Dec 09
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
5
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 09
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/04/pp7
Date of release: 2004 Dec 09
Document order number: 9397 750 13901
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