Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
Power MOSFET
2 Amps, 700 Volts N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.

FEATURES
* RDS(ON) < [email protected] = 10V
* Ultra Low gate charge (typical 17.2nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2N70L-TM3-T
2N70G-TM3-T
Note: Pin Assignment: G: Gate
D: Drain
Package
TO-251
S: Source
Pin Assignment
1
2
3
G
D
S
Packing
Tube
2N70L-TM3-T

(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TM3: TO-251
(3)Lead Plating
(3) L: Lead Free, G: Halogen Free
MARKING INFORMATION
PACKAGE
MARKING
TO-251
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-A53.b
2N70-M

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
2.0
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
8.0
A
140
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
2.8
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
30
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
110
4.24
UNIT
°С/W
°С/W
2 of 7
QW-R502-A53.b
2N70-M

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
700
VDS = 700V, VGS = 0V
VDS = 560V, VGS = 0V, TJ =125°С
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS =25V, VGS =0V, f =1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
Turn-On Rise Time
tR
VDD =30V, ID =0.5A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=560V, VGS=10V, ID=2.0A
Gate-Source Charge
QGS
(Note 1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, ISD = 2.0 A
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
tRR
VGS = 0 V, ISD = 2.0A
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
10
100
100
-100
0.4
2.0
V
μA
μA
nA
nA
V/°С
5.4
4.0
6.3
V
Ω
270
38
5
350
50
7
pF
pF
pF
35
65
105
50
17.2
1.7
4.4
40
70
115
70
ns
ns
ns
ns
nC
nC
nC
1.4
2.0
8.0
V
A
A
ns
μC
260
1.09
3 of 7
QW-R502-A53.b
UNISONIC TECHNOLOGIES CO., LTD
2N70-M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
4 of 7
QW-R502-A53.b
2N70-M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
E AS =
VDS
1
BVDSS
LIAS2
2
BVDSS - VDD
BVDSS
IAS
RG
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
5 of 7
QW-R502-A53.b
2N70-M
Preliminary
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Fig. 4B Unclamped Inductive Switching Waveforms
6 of 7
QW-R502-A53.b
2N70-M
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R502-A53.b
Similar pages