UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary Power MOSFET 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 17.2nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N70L-TM3-T 2N70G-TM3-T Note: Pin Assignment: G: Gate D: Drain Package TO-251 S: Source Pin Assignment 1 2 3 G D S Packing Tube 2N70L-TM3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TM3: TO-251 (3)Lead Plating (3) L: Lead Free, G: Halogen Free MARKING INFORMATION PACKAGE MARKING TO-251 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A53.b 2N70-M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A 2.0 A Continuous ID Drain Current Pulsed (Note 2) IDM 8.0 A 140 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 2.8 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 110 4.24 UNIT °С/W °С/W 2 of 7 QW-R502-A53.b 2N70-M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current Gate-Source Leakage Current IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA 700 VDS = 700V, VGS = 0V VDS = 560V, VGS = 0V, TJ =125°С VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Breakdown Voltage Temperature △BVDSS/△TJ ID = 250 μA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS =25V, VGS =0V, f =1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=560V, VGS=10V, ID=2.0A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR VGS = 0 V, ISD = 2.0A di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 100 100 -100 0.4 2.0 V μA μA nA nA V/°С 5.4 4.0 6.3 V Ω 270 38 5 350 50 7 pF pF pF 35 65 105 50 17.2 1.7 4.4 40 70 115 70 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A ns μC 260 1.09 3 of 7 QW-R502-A53.b UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 4 of 7 QW-R502-A53.b 2N70-M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L E AS = VDS 1 BVDSS LIAS2 2 BVDSS - VDD BVDSS IAS RG 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 7 QW-R502-A53.b 2N70-M Preliminary Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET Fig. 4B Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-A53.b 2N70-M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-A53.b