Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N70-R
Preliminary
Power MOSFET
4A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N70-R is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.

1
TO-220F1
FEATURES
* RDS(ON) < 2.8Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 16nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 6 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

SYMBOL

ORDERING INFORMATION
Note:

Ordering Number
Lead Free
Halogen Free
4N70L-TF1-T
4N70G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-220F1
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Copyright © 2014 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4
A
4
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
55
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
36
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 6.87mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
3.47
UNIT
°С/W
°С/W
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4N70-R

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
700
V
VDS = 700 V, VGS = 0 V
10 μA
100
Forward
VGS = 30 V, VDS = 0 V
nA
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
3.0
5.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10 V, ID = 2.2 A
3.3 3.8
Ω
DYNAMIC CHARACTERISTICS
450 690 pF
Input Capacitance
CISS
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
45 90 pF
f = 1MHz
Reverse Transfer Capacitance
CRSS
6
11 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
72 90
ns
Turn-On Rise Time
tR
32 50
ns
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
50 70
ns
Turn-Off Fall Time
tF
40 60
ns
Total Gate Charge
QG
16 20 nC
VDS= 50V, ID= 1.3A,
Gate-Source Charge
QGS
5.6
nC
VGS= 10 V (Note 1, 2)
Gate-Drain Charge
QGD
3.4
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4.4 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
4.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
17.6 A
Forward Current
250
ns
Reverse Recovery Time
trr
VGS = 0 V, IS = 4.4 A,
dI/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
1.5
μC
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4N70-R
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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