SURFACE MOUNT HIGH EFFICIENCY RECTIFIER US1A THRU US1M VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES • • • • • DO-214AC(SMA) Plastic package has underwrites laboratory flammability Classification 94V-0 Built-in strain relief, ideal for automated placement Glass passivated chip junction Fast switching for high efficiency High temperature soldering 260℃/10 second MECHANICAL DATA • • • • • Case: JEDED DO-214AC molded plastic over glass passivated chip Terminals: Solder plated, solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Weight: 0.002ounce, 0.064 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • • • Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. SYMBOLS US1A US1B Maximum Repetitive Peak Reverse Voltage VRRM 50 100 Maximum RMS Voltage VRMS 35 70 Maximum DC Blocking Voltage VDC 50 100 Maximum Average Forward Rectified Current At TA=55℃ Peak Forward Surge Current 8.3ms single half sine wave superimposed on rated load (JEDEC Method) US1D 200 140 200 US1G 400 280 400 US1J 600 420 600 US1K 800 560 800 US1M 1000 700 1000 UNIT Volts Volts Volts I(AV) 1.0 Amps IFSM 30 Amps Maximum Instantaneous Forward Voltage per at 1.0A VF Maximum DC Reverse Current at rated TA = 25℃ DC Blocking Voltage TA = 125℃ IR Typical Reverse Recovery Time Test conditions IF =0.5A, IR =1.0A, IRR =0.25A trr 50 100 nS Typical Junction Capacitance (Measured at 1.0MHz and applied reverse voltage of 4.0V) CJ 20 15 pF Typical Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Range 1.0 1.30 5.0 100 RθJA RθJL TJ TSTG 88 28 (-55 to +150) (-55 to +150) Notes: 1. Thermal resistance from Junction to ambient and from junction to lead mounted on P.C.B. with 0.2×0.2″(5.0 × 5.0mm) copper pad areas. Web Site: www.hkmic.com 1.70 Volts µA ℃/W ℃ ℃ SURFACE MOUNT HIGH EFFICIENCY RECTIFIER US1A THRU US1M VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere RATING AND CHRACTERISTIC CURVES US1A THRU US1M FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE 1.2 0.8 0.6 0.4 Single Phase Half W ave 60 Hz Resistive or Inductive Lo ad 0.37 5″(9.5m m) Lead Length 0.2 30 CURRENT, (A) 1.0 (A) AVERAGE FORWARD CURRENT, FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 8.3ms Single H alf Sine-W ave (JEDEC M ethod) T= T jm ax 20 10 1 C ycle 0 0 25 100 75 50 55 125 175 150 0 1 2 AMBIENT TEMPERATURE, (° C) 4 6 8 10 40 20 60 100 NUMBER OF CYCLES AT 60 Hz FIG .3-TYPICAL INSTANTANEO US FO RWARD CHARACTERISTICS FIG .4-TYPICAL REVERSE CHARACTERISTICS 0V 80 1.0 0.1 TJ =25° C Pulse W idth=300us 1% D uty C ycle 100 10 (μA) INSTANTANEOUS REVERSE CURRENT, 0V 60 -1 0 0V 50 /1 0 0/ 2 00 0- 4 V 00 V 30 10 (A) INSTANTANEOUS FORWARD CURRENT, 100 TJ =100° C 1.0 TJ =25℃ 0.1 0 40 20 60 80 100 120 140 0.01 0 .4 0.6 0.8 1.0 1.4 1.2 1 .6 1.8 PERCENT O F RATED PEAK REVERSE VO LTAGE,(%) INSTANTANEO US FORWARD VOLTAGE,(V) FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 1000 F1G .6-TES T CIRCUIT DIAG RAM A ND RE VE RSE RECO VE RY TIME CHARA CTERISTIC T rr US US 100 1 J -U 1A 50Ω 10Ω NON IND U CTIVE N O NIN DU C TIVE -U S 1G (-) S 1M (+) 25 Vdc (approx.) (-) T J =25° C f=1M Hz Vsig=50m Vp-p 1.0 PULSE G EN ER ATIOR (N OTE 2) D .U .T. 1Ω NO N IN D UC TIVE 0 -0.25A (+) OSCILLO S CO PE (N O TE 1) -1.0A 1cm 10 0.1 +0.5A 10 REVERSE VOLTAGE,(V) 100 NOTES : 1.Rise Time=7ns mas. Input Impedance= 1 magohm. 22pF 2.Rise time=10ns max. Source Impedance= 50 ohms Web Site: www.hkmic.com SE T TIM E B AS E FOR 50/100ns/cm