Diode AOD4120-AOD4170 VOLTAGE RANGE 30 t o 60 Volts CURRENT 16.0 Amperes FEATURES • • • • • • • AOD41 Schottky Barrier Chip Guard Ring Die Construction for Transient Protechion Low Power Loss, High efficiency High Surge Capability High Current capacity and Low Forward Voltage Drop For use in low voltage high frequency inverters, Free wheeling, and polarity protection applications Plastic Material has UL Flammability Classification 94V-0 MECHANICAL DATA • • • • • • Dimensions in inches and (millimeters) Case: AOD41 AC molded plastic Terminals: Plated Lead solderable per MIL-STD-202 Method 208 Polarity: See Diagram Weight: 2.24 grams (approx) Mounting Position: Any Marking: Type Number MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS • • Single Phase, half wave, 60Hz, resistive or inductive load For capacitive load derate current by 20% SYMBOLS AOD4120 AOD4130 AOD4140 AOD4150 AOD4160 AOD4170 UNIT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1)@Tc=95℃ Non-Repetitive Peak Forward Surge Current 8.3ms single half sine wave superimposed on rated load (JEDEC method) Forward Voltage Drop @IF =16A,TC=25℃ Peak Reverse Current at Rated DC Blocking Voltage TC = 25℃ TC = 100℃ Typical Junction Capacitance(Note2) Typical Resistance Junction to case(Note1) Operating and Storage Temperature Range VRRM VRWM VR VR(RMS) 30 35 40 45 50 60 V 21 25 28 32 35 42 V IO 16.0 A IFSM 250 A VFM IRM Cj RθJC TJ TSTG Notes: 1. Thermal Resistance Junction to case mounted on heatsink 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC 0.55 1.0 50 700 3.5 (-55 to +150) 0.65 V mA pF ℃/W ℃ Diode AOD4120-AOD4170 VOLTAGE RANGE 30 to 60 Volts CURRENT 16.0 Ampere 20 INSTANTANEOUS FORWARD CURRENT, ( A) FIG.1-FORWARD CURRENT DERATING CURVE 16 12 8 4 I( AV ) ,AVERAGE FORWARD CURRENT, ( A) RATINGE AND CHARACTERISTIC CURVES SRFL1630 THRU SRFL1660 0 0 50 100 TC ,CASE TMPERSTRUE( ℃ ) 150 SRFL1630-SRFL1645 10 Tj =25℃ 0.1 0.1 Pulse Width=300μs 2% duty cycle 0.3 0.5 0.7 0.9 VF,INSTANTANEOUS FORWARD VOLTAGE( V ) 4000 8.3ms Single Half Sine-Wave JEDEC Method FIG4 TYPICAL JUNCTION CAPACITANCE PER ELEMENT Tj =25℃ C j ,CAPACITANCE( pF) 250 200 150 100 1000 50 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 IR, INSTANTANOUS REVERSE CURRENT,( mA ) IFSM ,PEAK FORWARD SURGE CURRENT, ( A) SRFL1650-SRFL1660 1.0 FIG.3 MAX NON-REPETITIVE SURGE CURRENT 300 FIG.2-TYPICAL FORWARD CHARACTERISTICS 100 10 100 0.1 100 FIG.5-TYPICAL REVERSE CHARACTERISTICS Tj =100℃ Tj =75℃ 1.0 0.1 0.01 0 Tj =25℃ 40 80 120 PERCENT OF RATED REVERSE VOLTAGE,( % ) 1.0 10 VR,REVERSE VOLTAGE( v) 100