Datasheet

UNISONIC TECHNOLOGIES CO., LTD
13N50K
Preliminary
Power MOSFET
13A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 13N50K is an N-Channel enhancement mode power
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 13N50K is ideally suitable for high efficiency switch
mode power supply, power factor correction, electronic lamp ballast
based on half bridge topology.

1
TO-220F2
FEATURES
* RDS(ON) <0.48Ω @VGS = 10V
* Ultra low gate charge (typical 39nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13N50KL-TF2-T
13N50KG-TF2-T
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Copyright © 2014 Unisonic Technologies Co., Ltd
Package
TO-220F2
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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Preliminary
Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
TO-220F2
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
13
A
Pulsed Drain Current (Note 2)
IDM
52
A
Avalanche Current (Note 2)
IAR
13
A
Single Pulsed Avalanche Energy (Note 3)
EAS
700
mJ
Repetitive Avalanche Energy (Note 2)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
PD
48
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 8mH, IAS = 13A, VDD = 50V, RG= 25Ω ,Starting TJ = 25°C
4. ISD≤13.A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ= 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
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RATINGS
62.5
2.58
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
500
V
VDS = 500V, VGS = 0V
10
μA
100 nA
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C
0.5
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6.5A
0.42 0.48
Ω
DYNAMIC CHARACTERISTICS
1800 2300 pF
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
245 320 pF
f=1.0MHz
Reverse Transfer Capacitance
CRSS
25
35
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
40
90
nS
Turn-On Rise Time
tR
140 290 nS
VDD =250V, ID =13A,
RG =25Ω (Note 1,2)
Turn-Off Delay Time
tD(OFF)
100 210 nS
Turn-Off Fall Time
tF
85 180 nS
Total Gate Charge
QG
39
60
nC
VDS=400V, ID=13A,
Gate-Source Charge
QGS
12
nC
VGS=10 V (Note 1,2)
Gate-Drain Charge
QGD
11
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 13 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
13
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
52
A
Forward Current
Reverse Recovery Time
trr
VGS = 0V, IS = 13A,
290
nS
dIF / dt =100A/μs (Note 1)
Reverse Recovery Charge
QRR
2.6
μC
Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating ambient temperature
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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