Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF830-F
Power MOSFET
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET

DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.

FEATURES
* RDS(ON) <1.5Ω @ VGS=10V, ID=2.5A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UF830L-TA3-T
UF830G-TA3-T
TO-220
UF830L-TF3-T
UF830G-TF3-T
TO-220F
UF830L-TMS-T
UF830G-TMS-T
TO-251S
UF830L-TN3-R
UF830G-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGS
±30
V
Continuous
ID
4.5
A
Drain Current
Pulsed
IDM
18
A
TO-220
73
W
Power Dissipation (TC = 25°C)
PD
TO-220F
38
W
TO-251S/TO-252
46
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
300
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
TO-220
TO-220F
TO-251S/TO-252
TO-220
TO-220F
TO-251S/TO-252
θJA
θJC
RATINGS
62.5
62.5
100.3
1.71
3.31
2.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
BVDSS
VGS(TH)
ID(ON)
IDSS
TEST CONDITIONS
ID=250μA, VGS=0V
VGS=VDS, ID=250μA
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
VGS=±30V
ID=2.5A, VGS=10V (Note 2)
VDS≥10V, ID=2.7A
MIN
500
2.0
4.5
Gate-Source Leakage Current
IGSS
Static Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance (Note 1)
gFS
2.5
Turn-On Delay Time
tD(ON)
VDD=30V, ID ≈ 0.5A
Turn-On Rise Time
tR
RGS=25Ω
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
UNISONIC TECHNOLOGIES CO., LTD
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TYP MAX UNIT
V
4.0
V
A
25
μA
1.1
4.2
38
36
155
70
250
μA
±100
1.5
nA
Ω
S
ns
ns
ns
ns
60
50
170
90
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Power MOSFET
ELECTRICAL SPECIFICATIONS(Cont.) (TA =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Total Gate Charge
QG
VGS=10V, ID=1.3A
VDS=0.8×Rated BVDSS
Gate-Source Charge
QGS
I
G(REF)=100μA (Note 3)
Gate-Drain Charge
QGD
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.

INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
Internal Drain Inductance
Measured from the contact screw on tab to center of die
LD
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
LS
Remark: Modified MOSFET symbol showing the internal devices inductances as below.

TYP MAX UNIT
21
30
nC
5.2
nC
5.6
nC
600
pF
78
pF
15
pF
MIN
TYP
MAX UNIT
3.5
4.5
nH
nH
7.5
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD
TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
Continuous Source to Drain Current
ISD
Note 2
Pulse Source to Drain Current
ISDM
Reverse Recovery Time
trr
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
180
Reverse Recovery Charge
QRR
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
0.96
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
350
2.2
MAX UNIT
1.6
V
5.5
A
18
A
760
ns
4.3
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
Vary tP to Obtain
Required Peak IAS
+
RG
VDD
VGS
DUT
0V
tp
IAS
0.01Ω
Unclamped Energy Test Circuit
Unclamped Energy Waveforms
RL
+
RG
VDD
DUT
VGS
Switching Time Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
50%
10%
PULSE WIDTH
50%
Resistive Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveforms
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UF830-F
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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