Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N80-N
Power MOSFET
4.0A, 800V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N80-N is a N-channel mode power MOSFET using
UTC’s advanced technology to provide costomers planar stripe and
DMOS technology. This technology is specialized in allowing a
minimum on-state resistance, and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 4N80-N is universally applied in high efficiency switch
mode power supply.

FEATURES
* RDS(on)<3.0Ω @VGS =10V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Note:

Ordering Number
Lead Free
Halogen Free
4N80L-TM3-T
4N80G-TM3-T
4N80L-TN3-R
4N80G-TN3-R
Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-A96.A
4N80-N

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
4.0
A
Drain Current
Pulsed (Note 2)
IDM
16
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
250
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=31.25mH, IAS=4A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
110
2.5
UNIT
°C/W
°C/W
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QW-R502-A96.A
4N80-N

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
800
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
VDS=800V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=640V, TC=125°C
Forward
VDS=0V ,VGS=30V
Gate-Source Leakage Current
IGSS
Reverse
VDS=0V ,VGS=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=640V, VGS=10V,
Gate-Source Charge
QGS
ID=4A (Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=400V, ID=4A,
RG=25Ω (Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =4A, VGS=0V
Body Diode Reverse Recovery Time
trr
VGS=0V, IS=4A,
dIF/dt=100A/μs (Note 1)
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
950
MAX
UNIT
V
mV/°C
10
µA
100
µA
100
nA
-100
nA
2.58
5.0
3.0
V
Ω
570
65
9.5
880
100
12
pF
pF
pF
24
7.3
7.25
50
110
95
70
35
nC
nC
nC
ns
ns
ns
ns
60
130
110
90
4
16
1.4
575
3.65
A
A
V
ns
μC
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QW-R502-A96.A
4N80-N

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A96.A
4N80-N

Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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4N80-N
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
50
200
150
100
50
0
0
0
1
2
3
4
Gate Threshold Voltage, VTH (V)
5
Drain Current, ID (A)
0
200 400 600 800 1000 1200
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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