UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. FEATURES * RDS(ON) < 0.70Ω @ VGS = 10 V, ID = 6 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N60KL-TA3-T 12N60KG-TA3-T 12N60KL-TF3-T 12N60KG-TF3-T 12N60KL-TF1-T 12N60KG-TF1-T 12N60KL-TF2-T 12N60KG-TF2-T 12N60KL-TF3T-T 12N60KG-TF3T-T 12N60KL-TM3-T 12N60KG-TM3-T 12N60KL-TN3-R 12N60KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R502-B06.G 12N60K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-B06.G 12N60K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous ID 12 A Drain Current Pulsed (Note 2) IDM 48 A Avalanche Energy Single Pulsed (Note 3) EAS 420 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.78 V/ns TO-220 225 W TO-220F/TO-220F1 51 W Power Dissipation PD TO-220F3 TO-220F2 54 W TO-251/TO-252 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 5.8mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-220F3 TO-251/TO-252 TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATING 62.5 UNIT °C/W 110 0.56 θJC 2.43 °C/W 2.31 2.6 3 of 7 QW-R502-B06.G 12N60K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 V Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 1 µA Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A 0.57 0.70 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 1600 1900 pF VDS = 25 V, VGS = 0 V, Output Capacitance COSS 173 270 pF f = 1MHz 10 18 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 90 100 ns Turn-On Rise Time tR 109 125 ns VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 190 210 ns 100 130 ns Turn-Off Fall Time tF Total Gate Charge QG 40 nC VDS= 50V,ID= 1.3A, Gate-Source Charge QGS 10.4 nC VGS= 10 V (Note 1, 2) 10 nC Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS 12 A Forward Current Maximum Pulsed Drain-Source Diode ISM 48 A Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A 1.4 V Reverse Recovery Time tRR VGS=0V, IS=0.2A, 544 ns di/dt=100A/μs Reverse Recovery Charge QRR 5.9 μC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-B06.G 12N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-B06.G 12N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-B06.G 12N60K-MT Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-B06.G