Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12N65K-MT
Preliminary
Power MOSFET
12A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 12N65K-MT are N-Channel enhancement mode
power field effect transistors (MOSFET) which are produced by
using UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.

FEATURES
* RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N65KL-TA3-T
12N65KG-TA3-T
12N65KL-TF1-T
12N65KG-TF1-T
12N65KL-TF2-T
12N65KG-TF2-T
12N65KL-TQ2-T
12N65KG-TQ2-T
12N65KL-TQ2-R
12N65KG-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-263
TO-263
1
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
(1) T: Tube
12N65KL-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2
TQ2: TO-263
(3) L: Lead Free, G: Halogen Free and Lead Free
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12N65K-MT

Preliminary
Power MOSFET
MARKING
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12N65K-MT

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous
ID
12
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
400
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.7
V/ns
TO-220/TO-263
51
W
Power Dissipation
PD
TO-220F1/TO-220F2
225
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 5.55mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 12A, di/dt ≤200A/μs, VDD ≤BVDSS Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-263
Junction to Case
TO-220F1/TO-220F2
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJC
RATING
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
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12N65K-MT

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA
650
V
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
1
µA
Gate-Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA,Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6.0A
0.60 0.75 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1600 1900 pF
VDS = 25 V, VGS = 0 V,
Output Capacitance
COSS
175 210 pF
f = 1MHz
10
22
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
100 110 ns
Turn-On Rise Time
tR
125 138 ns
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
180 230 ns
104 140 ns
Turn-Off Fall Time
tF
Total Gate Charge
QG
39
54
nC
VDS= 50V,ID= 1.3A,
Gate-Source Charge
QGS
10
nC
VGS= 10 V (Note 1, 2)
9
nC
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
12
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
48
A
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 12A
1.4
V
Reverse Recovery Time
trr
IS=12A, VGS=0V
590
ns
di/dt=100A/μs (Note 1)
Reverse Recovery Charge
QRR
6.2
μC
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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12N65K-MT

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VGS
(Driver)
P.W.
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Period
D=
VDD
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12N65K-MT

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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12N65K-MT
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R502-B07.G
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