Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N70-C
Power MOSFET
10A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N70-C is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.

FEATURES
* RDS(ON) <[email protected] =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
10N70L-TF3-T
10N70G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING INFORMATION
PACKAGE
MARKING
TO-220
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A80.A
10N70-C

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
10
A
Continuous
ID
10
A
Drain Current
Pulsed (Note 2)
IDM
40
A
Single Pulsed (Note 3)
EAS
150
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
50
W
PD
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 3mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
2 of 6
QW-R502-A80.A
10N70-C

Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
700
V
VDS = 700V, VGS = 0V
10
µA
Forward
VGS = 30 V, VDS = 0 V
100 nA
Gate-Source Leakage Current
IGSS
Reverse
VGS = -30 V, VDS = 0 V
-100 nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID = 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 5A
0.75 0.86 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1495 1700 pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
414 200 pF
Reverse Transfer Capacitance
CRSS
8
20
pF
SWITCHING CHARACTERISTICS
99
120 ns
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
132 160 ns
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
233 270 ns
Turn-Off Fall Time
tF
121 140 ns
43
60
nC
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10 V
Gate-Source Charge
QGS
13
nC
(Note 1, 2)
Gate-Drain Charge
QGD
10
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =10A
1.4
V
Maximum Continuous Drain-Source Diode
IS
10
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
40
A
Forward Current
Reverse Recovery Time
trr
420
ns
VGS = 0 V, IS = 10A,
dIF / dt = 100 A/µs (Note 1)
Reverse Recovery Charge
QRR
4.2
µC
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-A80.A
10N70-C

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-A80.A
10N70-C

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
5 of 6
QW-R502-A80.A
10N70-C
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
200
150
100
50
200
150
100
50
0
0
0
0
200
600
800 1000
400
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
7
1
2
3
Gate Threshold Voltage, VTH (V)
4
Drain Current vs. Source to Drain Voltage
14
12
Drain Current, ID (A)
6
Drain Current, ID (A)

Power MOSFET
5
4
3
2
VGS=10V, ID=5A
1
6
5
1
2
3
4
Drain to Source Voltage, VDS (V)
8
6
4
2
0
0
10
7
0
0
0.25
0.5
0.75
1
1.25
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R502-A80.A