Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PMBT5551
NPN high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PMBT5551
FEATURES
PINNING
• Low current (max. 300 mA)
PIN
• High voltage (max. 160 V).
1
base
2
emitter
3
collector
APPLICATIONS
DESCRIPTION
• General purpose
• Telephony.
DESCRIPTION
handbook, halfpage
3
3
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
1
MARKING
TYPE NUMBER
MARKING
PMBT5551
1
CODE(1)
Top view
*G1
2
2
MAM255
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PMBT5551
PACKAGE
NAME
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
180
V
VCEO
collector-emitter voltage
open base
−
160
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
300
mA
ICM
peak collector current
−
600
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
2004 Jan 21
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PMBT5551
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
note 1
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
−
50
nA
−
50
µA
−
50
nA
IC = 1 mA
80
−
IC = 10 mA
80
250
IC = 50 mA
IC = 0; VEB = 4 V
hFE
DC current gain
VCE = 5 V; (see Fig.2)
VBEsat
base-emitter saturation voltage
UNIT
IE = 0; VCB = 120 V; Tamb = 100 °C
emitter-base cut-off current
collector-emitter saturation voltage
MAX.
IE = 0; VCB = 120 V
IEBO
VCEsat
MIN.
30
−
IC = 10 mA; IB = 1 mA
−
150
mV
IC = 50 mA; IB = 5 mA
−
200
mV
IC = 10 mA; IB = 1 mA
−
1
V
IC = 50 mA; IB = 5 mA
−
1
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
6
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz
−
30
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
100
300
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
−
8
dB
2004 Jan 21
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PMBT5551
MGD814
160
handbook, full pagewidth
hFE
120
VCE = 5 V
80
40
0
10−1
1
10
102
103
IC mA
Fig.2 DC current gain; typical values
2004 Jan 21
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PMBT5551
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Jan 21
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
5
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PMBT5551
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 21
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp7
Date of release: 2004 Jan 21
Document order number: 9397 750 12504