Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ge
M3D102
BF820W
NPN high-voltage transistor
Product data sheet
Supersedes data of 1997 Sep 03
2003 Sep 09
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
BF820W
FEATURES
PINNING
• Low current (max. 50 mA)
PIN
• High voltage (max. 300 V).
1
base
2
emitter
3
collector
APPLICATIONS
DESCRIPTION
• Telephony and professional communication equipment.
DESCRIPTION
3
handbook, halfpage
NPN high-voltage transistor in a SOT323 plastic package.
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
BF820W
2
1
1V*
2
Top view
Notes
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
300
V
VCEO
collector-emitter voltage
open base
−
300
V
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
200
mW
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
−
Cre
feedback capacitance
IC = ic = 0; VCB = 30 V; f = 1 MHz
−
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
60
−
MHz
2003 Sep 09
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
BF820W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
300
V
VCEO
collector-emitter voltage
open base
−
300
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
50
mA
ICM
peak collector current
−
100
mA
IBM
peak base current
−
50
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 200 V
−
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C
−
10
µA
IC = 0; VEB = 5 V
−
50
nA
DC current gain
IC = 25 mA; VCE = 20 V
50
−
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5 mA; note 1
−
600
mV
Cre
feedback capacitance
IC = ic = 0; VCB = 30 V; f = 1 MHz
−
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
60
−
MHz
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Sep 09
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
BF820W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2003 Sep 09
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
BF820W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Sep 09
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/04/pp6
Date of release: 2003 Sep 09
Document order number: 9397 750 11651
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