Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D187
PMST5550; PMST5551
NPN high-voltage transistors
Product data sheet
Supersedes data of 1997 May 20
1999 Apr 29
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMST5550; PMST5551
FEATURES
PINNING
• Low current (max. 300 mA)
PIN
• High voltage (max. 160 V).
1
base
2
emitter
3
collector
APPLICATIONS
DESCRIPTION
• Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
3
handbook, halfpage
NPN high-voltage transistor in a SOT323 plastic package.
PNP complement: PMST5401.
3
1
MARKING
2
MARKING CODE(1)
TYPE NUMBER
PMST5550
∗1F
PMST5551
∗G3
1
2
Top view
MAM062
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
PMST5550
−
160
V
PMST5551
−
180
V
PMST5550
−
140
V
PMST5551
−
160
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
6
V
IC
collector current (DC)
−
300
mA
ICM
peak collector current
−
600
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 29
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMST5550; PMST5551
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
PMST5550
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = 100 V
−
100
nA
IE = 0; VCB = 100 V; Tamb = 100 °C
−
100
µA
IE = 0; VCB = 120 V
−
50
nA
IE = 0; VCB = 120 V; Tamb = 100 °C
−
50
µA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
−
50
nA
hFE
DC current gain
VCE = 5 V; (see Fig.2)
IC = 1 mA
60
−
IC = 10 mA
60
250
IC = 50 mA; note 1
20
−
IC = 1 mA
80
−
IC = 10 mA
80
250
IC = 50 mA; note 1
30
−
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA
−
150
mV
collector-emitter saturation
voltage
IC = 50 mA; IB = 5 mA; note 1
PMST5550
−
250
mV
PMST5551
−
200
mV
−
1
V
PMST5550
−
1.2
V
PMST5551
−
1
V
PMST5551
PMST5550
DC current gain
PMST5551
VCEsat
VBEsat
VCE = 5 V; (see Fig.2)
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
base-emitter saturation voltage
IC = 50 mA; IB = 5 mA; note 1
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
6
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
30
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
100
300
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
−
8
dB
PMST5551
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 29
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMST5550; PMST5551
MGD814
160
handbook, full pagewidth
hFE
120
VCE = 5 V
80
40
0
10−1
1
10
102
103
IC mA
Fig.2 DC current gain; typical values.
1999 Apr 29
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMST5550; PMST5551
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 29
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMST5550; PMST5551
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 29
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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Printed in The Netherlands
115002/00/04/pp7
Date of release: 1999 Apr 29
Document order number: 9397 750 05907
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