Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D187
PMSTA42; PMSTA43
NPN high-voltage transistors
Product data sheet
Supersedes data of 1997 Jun 19
1999 May 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMSTA42; PMSTA43
FEATURES
PINNING
• High current (max. 500 mA)
PIN
• High voltage (max. 200 V).
1
base
2
emitter
3
collector
APPLICATIONS
DESCRIPTION
• High-voltage switching in telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
PNP complements: PMSTA92 and PMSTA93.
3
handbook, halfpage
3
MARKING
1
MARKING CODE(1)
TYPE NUMBER
PMSTA42
∗1D
PMSTA43
∗1E
2
1
2
Top view
MAM062
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1
Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
PMSTA42
−
300
V
PMSTA43
−
200
V
PMSTA42
−
300
V
PMSTA43
−
200
V
−
6
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 21
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMSTA42; PMSTA43
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
CONDITIONS
UNIT
PMSTA42
IE = 0; VCB = 200 V
−
100
nA
PMSTA43
IE = 0; VCB = 160 V
−
100
nA
PMSTA42
IC = 0; VEB = 6 V
−
100
nA
PMSTA43
IC = 0; VEB = 4 V
−
100
nA
IC = 1 mA; VCE = 10 V
25
−
IC = 10 mA; VCE = 10 V
40
−
IC = 30 mA; VCE = 10 V; note 1
40
−
−
500
mV
PMSTA42
−
3
pF
PMSTA43
−
4
pF
−
MHz
emitter cut-off current
DC current gain
collector-emitter saturation voltage
IC = 20 mA; IB = 2 mA
Cre
feedback capacitance
IC = ic = 0; VCB = 20 V; f = 1 MHz
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz 50
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 May 21
MAX.
collector cut-off current
VCEsat
fT
MIN.
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMSTA42; PMSTA43
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 May 21
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PMSTA42; PMSTA43
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 May 21
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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Printed in The Netherlands
115002/00/02/pp6
Date of release: 1999 May 21
Document order number: 9397 750 05964