Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
PMST4403
PNP switching transistor
Product data sheet
Supersedes data of 1997 May 29
1999 Apr 22
NXP Semiconductors
Product data sheet
PNP switching transistor
PMST4403
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 40 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• Switching and linear amplification.
DESCRIPTION
3
handbook, halfpage
PNP switching transistor in a SOT323 plastic package.
NPN complement: PMST4401.
3
1
MARKING
2
MARKING CODE(1)
TYPE NUMBER
1
∗2T
PMST4403
2
Top view
MAM048
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
2
NXP Semiconductors
Product data sheet
PNP switching transistor
PMST4403
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
IE = 0; VCB = −40 V
−
−50
nA
IE = 0; VCB = −40 V; Tj = 150 °C
−
−10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−50
hFE
DC current gain
VCE = −1 V; (see Fig.2)
VBEsat
−
−
IC = −0.1 mA
30
−
IC = −1 mA
60
−
IC = −10 mA
100
−
IC = −150 mA; VCE = −2 V; note 1
100
300
IC = −500 mA; VCE = −2 V; note 1
20
−
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA; note 1
−
−400
mV
IC = −500 mA; IB = −50 mA; note 1
−
−750
mV
base-emitter saturation voltage
IC = −150 mA: IB = −15 mA; note 1
+750
−950
mV
IC = −500 mA; IB = −50 mA; note 1
−
−1.3
V
DC current gain
VCEsat
UNIT
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
8.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
35
pF
fT
transition frequency
IC = −20 mA; VCE = −10 V; f = 100 MHz 200
−
MHz
−
40
ns
Switching times (between 10% and 90% levels); (see Fig.3)
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
ton
turn-on time
td
delay time
−
15
ns
tr
rise time
−
30
ns
toff
turn-off time
−
350
ns
ts
storage time
−
300
ns
tf
fall time
−
50
ns
Note
1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 22
3
NXP Semiconductors
Product data sheet
PNP switching transistor
PMST4403
MGD812
300
handbook, full pagewidth
hFE
VCE = −1 V
200
100
0
−10−1
−1
−10
−102
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
1999 Apr 22
4
oscilloscope
IC mA
−103
NXP Semiconductors
Product data sheet
PNP switching transistor
PMST4403
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 22
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP switching transistor
PMST4403
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 22
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
115002/00/03/pp7
Date of release: 1999 Apr 22
Document order number: 9397 750 05728
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