SO T2 3 PMBT2907 40V, 600 mA, PNP switching transistor 6 March 2015 Product data sheet 1. General description PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222 60V variant: PMBT2907A 2. Features and benefits • • Single general-purpose switching transistor AEC-Q101 qualified 3. Applications • Switching and linear amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -40 V IC collector current - - -600 mA hFE DC current gain 100 - 300 VCE = -10 V; IC = -150 mA; Tamb = 25 °C 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 C B E 1 2 TO-236AB (SOT23) Scan or click this QR code to view the latest information for this product sym132 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 6. Ordering information Table 3. Ordering information Type number PMBT2907 Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code [1] PMBT2907 %2B [1] PMBT2907 Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -60 V VCEO collector-emitter voltage open base - -40 V VEBO emitter-base voltage open collector - -5 V IC collector current - -600 mA ICM peak collector current - -800 mA IBM peak base current - -200 mA Ptot total power dissipation - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] Transistor mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. aaa-014677 300 (1) Ptot (mW) 200 100 0 -75 -25 25 75 125 175 Tamb (°C) (1) FR4 PCB; standard footprint Fig. 1. Power derating curve 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air PMBT2907 Product data sheet [1] All information provided in this document is subject to legal disclaimers. 6 March 2015 Min Typ Max Unit - - 500 K/W © NXP Semiconductors N.V. 2015. All rights reserved 3 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor [1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. aaa-014479 103 duty cycle = 1 Zth (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 Mounted on FR4 PCB; standard footprint. Fig. 2. Transient thermal impedance as a function of pulse time; typical values PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 °C - - -20 nA VCB = -50 V; IE = 0 A; Tj = 125 °C - - -20 µA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -50 nA hFE DC current gain VCE = -10 V; IC = -0.1 mA; Tamb = 25 °C 35 - - VCE = -10 V; IC = -1 mA; Tamb = 25 °C 50 - - VCE = -10 V; IC = -10 mA; Tamb = 25 °C 75 - - VCE = -10 V; IC = -150 mA; 100 - 300 30 - - - - -400 mV - - -1.6 V base-emitter saturation IC = -150 mA; IB = -15 mA; voltage Tamb = 25 °C - - -1.3 V IC = -500 mA; IB = -50 mA; - - -2.6 V Tamb = 25 °C VCE = -10 V; IC = -500 mA; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -150 mA; IB = -15 mA; Tamb = 25 °C IC = -500 mA; IB = -50 mA; Tamb = 25 °C VBEsat Tamb = 25 °C td delay time IC = -150 mA; IBon = -15 mA; - - 12 ns tr rise time IBoff = 15 mA; Tamb = 25 °C - - 30 ns ton turn-on time - - 40 ns ts storage time - - 300 ns tf fall time - - 65 ns toff turn-off time - - 365 ns CC collector capacitance - - 8 pF - - 30 pF 200 - - MHz VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C CE emitter capacitance VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = -20 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor aaa-014480 400 hFE aaa-014481 -1 IB = -20 mA IC (A) (1) -18 300 -14 -16 -0.8 -12 -8 -0.6 -4 -0.4 -2 (3) 100 -0.2 -1 -102 -10 IC (mA) 0 -103 VCE = -10 V 0 -2 -4 -6 -8 -10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C Fig. 4. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. -6 (2) 200 0 -10-1 -10 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values aaa-014482 -1.2 aaa-014483 -1.2 VBEsat (V) VBE (V) -1.0 (1) -0.8 -0.4 (1) (2) -0.8 (3) -0.6 (2) (3) -0.4 0 -10-1 Fig. 5. -1 -10 -102 IC (mA) -0.2 -10-1 -103 -1 VCE = -10 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values PMBT2907 Product data sheet Fig. 6. -102 IC (mA) -103 Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 6 March 2015 -10 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor aaa-014484 -1 aaa-014699 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (1) (2) (1) (2) (3) -10-2 -10-1 Fig. 7. -1 (3) -10 -102 IC (mA) -10-2 -10-1 -103 -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 150 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values PMBT2907 Product data sheet Fig. 8. -102 IC (mA) -103 Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 6 March 2015 -10 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on Fig. 9. tf t off 006aaa266 BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 10. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version SOT23 References IEC JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 11. Package outline TO-236AB (SOT23) PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 12. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 13. Wave soldering footprint for TO-236AB (SOT23) PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMBT2907 v.5 20150306 Product data sheet - PMBT2907_ PMBT2907A v.4 Modifications: • • • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors Legal texts have been adapted to the new company name where appropriate Data sheet PMBT29007_PMBT2907A split into two separate data sheets PMBT2907_ PMBT2907A v.4 20040116 Product data sheet - PMBT2907_ PMBT2907A v.3 PMBT2907_ PMBT2907A v.3 19990427 Product specification - PMBT2907_ PMBT2907A v.2 PMBT2907_ PMBT2907A v.2 19970904 Product specification - PMBT2907_ PMBT2907A v.1 PMBT2907_ PMBT2907A v.1 19970507 Product specification - - PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 14 PMBT2907 NXP Semiconductors 40V, 600 mA, PNP switching transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 1 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 8 Quality information ............................................... 8 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 March 2015 PMBT2907 Product data sheet All information provided in this document is subject to legal disclaimers. 6 March 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 14