Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
PMST3904
NPN switching transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Jan 21
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
FEATURES
QUICK REFERENCE DATA
• Collector current capability IC = 200 mA
SYMBOL
• Collector-emitter voltage VCEO = 40 V.
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
200
mA
APPLICATIONS
• General amplification and switching.
PINNING
PIN
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
DESCRIPTION
1
base
2
emitter
3
collector
MARKING
TYPE NUMBER
3
handbook, halfpage
MARKING CODE(1)
3
∗1A
PMST3904
Note
1
1. ∗ = p: Made in Hong Kong.
2
∗ = t: Made in Malaysia.
1
∗ = W: Made in China.
Top view
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
PMST3904
−
2004 Jan 21
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT323
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
60
V
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
200
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21
3
VALUE
UNIT
625
K/W
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6 V
−
50
nA
hFE
DC current gain
VCE = 1 V; see Fig.2; note 1
IC = 0.1 mA
60
−
IC = 1 mA
80
−
IC = 10 mA
100
300
IC = 50 mA
60
−
IC = 100 mA
30
−
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA
−
200
mV
IC = 50 mA; IB = 5 mA
−
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA
−
950
mV
Cc
collector capacitance
IE = Ie = 0; VCB = 5 V; f = 1 MHz
−
4
pF
Ce
emitter capacitance
IC = Ic = 0; VBE = 500 mV;
f = 1 MHz
−
8
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
300
−
MHz
F
noise figure
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
5
dB
−
35
ns
Switching times (between 10% and 90% levels); see Fig.7
td
delay time
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
tr
rise time
−
35
ns
ts
storage time
−
200
ns
tf
fall time
−
50
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 21
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
MGU822
MGU821
500
250
handbook, halfpage
handbook, halfpage
IC
(mA)
h FE
400
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
(1)
300
150
(8)
(9)
(2)
200
100
(10)
(3)
100
50
0
10 −1
1
10
102
I C (mA)
0
103
0
2
4
6
8
10
VCE (V)
Tamb = 25 °C.
(1)
(2)
(3)
(4)
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.
IB = 5 mA.
IB = 4.5 mA.
IB = 4 mA.
IB = 3.5 mA.
Fig.3
Fig.2 DC current gain; typical values.
(9) IB = 1 mA.
(10) IB = 0.5 mA.
Collector current as a function of
collector-emitter voltage.
MGU823
1200
MGU824
1200
handbook, halfpage
handbook, halfpage
VBEsat
VBE
(mV)
1000
(mV)
1000
(1)
(1)
800
800
(2)
600
(3)
(2)
600
(3)
400
400
200
10 −1
1
10
102
I C (mA)
200
10 −1
103
VCE = 1 V.
(1) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current.
2004 Jan 21
5
1
10
102
I C (mA)
Base-emitter saturation voltage as a
function of collector current.
103
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
MGU825
103
handbook, halfpage
VCEsat
(mV)
(1)
(2)
(3)
102
10
10 −1
1
10
102
I C (mA)
103
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = −1.9 V; VCC = 3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
2004 Jan 21
6
oscilloscope
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2004 Jan 21
REFERENCES
IEC
JEDEC
JEITA
SC-70
7
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
NXP Semiconductors
Product data sheet
NPN switching transistor
PMST3904
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jan 21
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp9
Date of release: 2004 Jan 21
Document order number: 9397 750 12537