Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D187
2PB1219A
PNP general purpose transistor
Product data sheet
Supersedes data of 1997 Mar 25
1999 Apr 12
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB1219A
FEATURES
PINNING
• High current (max. 500 mA)
PIN
DESCRIPTION
• Low voltage (max. 50 V)
1
base
• Low collector-emitter saturation voltage (max. 600 mV).
2
emitter
3
collector
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
3
handbook, halfpage
PNP transistor in a SOT323; SC70 plastic package.
NPN complement: 2PD1820A.
3
1
MARKING
2
MARKING CODE(1)
TYPE NUMBER
D∗Q
1
2PB1219AR
D∗R
Top view
2PB1219AS
D∗S
2PB1219AQ
Note
Fig.1
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
2
MAM048
Simplified outline (SOT323; SC70)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−60
V
VCEO
collector-emitter voltage
open base
−
−50
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−500
mA
ICM
peak collector current
−
−1
A
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323; SC70 standard mounting conditions.
1999 Apr 12
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB1219A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −20 V
−
−100
nA
IE = 0; VCB = −20 V; Tj = 150 °C
−
−5
μA
−
−100
nA
2PB1219AQ
85
170
2PB1219AR
120
240
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = −4 V
hFE
DC current gain
IC = −150 mA; VCE = −10 V; note 1
170
340
hFE
DC current gain
2PB1219AS
IC = −500 mA; VCE = −10 V; note 1
40
−
VCEsat
collector-emitter saturation voltage
IC = −300 mA; IB = −30 mA; note 1
−
−600
mV
VBEsat
base-emitter saturation voltage
IC = −300 mA; IB = −30 mA; note 1
−
−1.5
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
15
pF
fT
transition frequency
IC = 50 mA; VCE = −10 V;
f = 100 MHz; note 1
100
−
MHz
2PB1219AR
120
−
MHz
2PB1219AS
140
−
MHz
2PB1219AQ
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB1219A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 12
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB1219A
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 12
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp6
Date of release: 1999 Apr 12
Document order number: 9397 750 05589