Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
2PB709AW
PNP general purpose transistor
Product data sheet
2002 Jun 26
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB709AW
FEATURES
PINNING
• High collector current (max. 100 mA)
PIN
• Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
3
handbook, halfpage
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
3
1
MARKING
2
MARKING CODE(1)
TYPE NUMBER
2PB709AQW
N5*
1
2PB709ARW
N7*
Top view
2PB709ASW
N9*
Note
Fig.1
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
2
MAM048
Simplified outline SC-70 (SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−45
V
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
2002 Jun 26
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB709AW
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
625
K/W
note 1
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −45 V
−
−10
nA
IE = 0; VCB = −45 V; Tj = 150 °C
−
−5
μA
−
−10
nA
2PB709AQW
160
260
2PB709ARW
210
340
collector-base cut-off current
IEBO
emitter-base cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
IC = −2 mA; VCE = −10 V
290
460
VCEsat
collector-emitter saturation voltage
2PB709ASW
IC = −100 mA; IB = −10 mA;
note 1
−
−500
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V;
f = 1 MHz
−
5
pF
fT
transition frequency
IC = −1 mA; VCE = −10 V;
f = 100 MHz
60
−
MHz
2PB709ARW
70
−
MHz
2PB709ASW
80
−
MHz
2PB709AQW
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2002 Jun 26
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB709AW
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
2002 Jun 26
REFERENCES
IEC
JEDEC
EIAJ
SC-70
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB709AW
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jun 26
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp6
Date of release: 2002 Jun 26
Document order number: 9397 750 09758
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