Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
BC857M series
PNP general purpose transistors
Product data sheet
Supersedes data of 2003 Jul 15
2004 Mar 10
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
FEATURES
QUICK REFERENCE DATA
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
SYMBOL
• Board space 1.3 × 0.9 mm
• Power dissipation comparable to SOT23.
APPLICATIONS
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−45
V
IC
collector current (DC)
−100
mA
ICM
peak collector current
−200
mA
PINNING
• General purpose small signal DC
PIN
• Low and medium frequency AC applications
• Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
3
handbook, halfpage
2
1
3
MARKING
1
2
TYPE NUMBER
Bottom view
MARKING CODE
BC857AM
D1
BC857BM
D2
BC857CM
D3
MAM469
Fig.1 Simplified outline (SOT883) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC857AM
BC857BM
−
DESCRIPTION
Leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
BC857CM
2004 Mar 10
2
VERSION
SOT883
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−45
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
note 1
−
250
mW
note 2
−
430
mW
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
note 1
500
K/W
note 2
290
K/W
in free air
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.
2004 Mar 10
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
UNIT
−
−15
nA
VCB = −30 V; IE = 0; Tj = 150 °C
−
−5
μA
−
−100
nA
BC857AM
125
250
BC857BM
220
475
emitter-base cut-off current
VEB = −5 V; IC = 0
hFE
DC current gain
VCE = −5 V; IC = −2 mA
BC857CM
VCEsat
MAX.
VCB = −30 V; IE = 0
collector-base cut-off current
IEBO
VBE
MIN.
base-emitter voltage
collector-emitter saturation voltage
420
800
IC = −2 mA; VCE = −5 V
−600
−750
mV
IC = −10 mA; VCE = −5 V
−
−820
mV
IC = −10 mA; IB = −0.5 mA
−
−200
mV
IC = −100 mA; IB = −5 mA; note 1
−
−400
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
2.5
pF
fT
transition frequency
VCE = −5 V; IC = −10 mA;
f = 100 MHz
100
−
MHz
F
noise figure
IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
−
10
dB
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Mar 10
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857AM
MLE188
500
MLE189
−1200
handbook, halfpage
handbook, halfpage
VBE
(mV)
hFE
−1000
400
(1)
(1)
−800
300
(2)
(2)
200
−600
(3)
0
−10−2
(3)
−400
100
−10−1
−1
−10
−200
−10−2
−102
−103
IC (mA)
−10−1
−10
−1
−102
−103
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3
Fig.2 DC current gain; typical values.
MLE190
−104
handbook, halfpage
Base-emitter voltage as a function of
collector current; typical values.
MLE191
−1200
handbook, halfpage
VBEsat
(mV)
VCEsat
(mV)
−1000
(1)
−103
(2)
−800
−102
(3)
−600
(1)
(2)
(3)
−10
−10−1
−1
−10
−400
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
5
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857BM
MLE192
1000
MLE193
−1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
−1000
800
(1)
600
−800
(1)
(2)
−600
400
(2)
200
0
−10−2
(3)
−400
(3)
−10−1
−1
−10
−200
−10−2
−102
−103
IC (mA)
−10−1
−10
−1
−102
−103
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7
Fig.6 DC current gain; typical values.
MLE194
−104
handbook, halfpage
Base-emitter voltage as a function of
collector current; typical values.
MLE195
−1200
handbook, halfpage
VBEsat
(mV)
VCEsat
(mV)
−1000
(1)
−103
(2)
−800
(3)
−600
(1)
−102
(2)
−400
(3)
−10
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
6
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857CM
MLE196
1000
MLE197
−1200
VBE
handbook, halfpage
handbook, halfpage
hFE
(mV)
(1)
−1000
800
(1)
−800
600
(2)
(2)
−600
400
(3)
(3)
−400
200
0
−10−2
−10−1
−1
−10
−200
−10−1
−102
−103
IC (mA)
−1
−10
−102
−103
IC (mA)
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
Fig.10 DC current gain; typical values.
MLE198
−104
handbook, halfpage
MLE199
−1200
handbook, halfpage
VBEsat
VCEsat
(mV)
(mV)
−1000
(1)
−103
(2)
−800
(3)
−600
(1)
−102
(2)
−400
(3)
−10
−10−1
−1
−10
−102
IC (mA)
−200
−10−1
−103
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
−1
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883
2004 Mar 10
REFERENCES
IEC
JEDEC
JEITA
SC-101
8
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Limiting values ⎯ Stress above one or more limiting
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System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 10
9
NXP Semiconductors
Customer notification
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made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Mar 10
Document order number: 9397 750 12839
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