Data Sheet

PDTD113ZT
NPN 500 mA, 50 V resistor-equipped transistor;
R1 = 1 kΩ, R2 = 10 kΩ
Rev. 02 — 23 March 2009
Product data sheet
1. Product profile
1.1 General description
NPN 500 mA Resistor-Equipped Transistor (RET) in a small Surface-Mounted
Device (SMD) plastic package.
PNP complement: PDTB113ZT.
1.2 Features
n Built-in bias resistors
n Simplifies circuit design
n 500 mA output current capability
n Reduces component count
n Reduces pick and place costs
n ±10 % resistor ratio tolerance
1.3 Applications
n Digital application in automotive and
industrial segments
n Controlling IC inputs
n Cost-saving alternative for BC817 series
in digital applications
n Switching loads
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
50
V
IO
output current
-
-
500
mA
R1
bias resistor 1 (input)
0.7
1
1.3
kΩ
R2/R1
bias resistor ratio
9
10
11
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2.
Pinning
Pin
Description
1
input (base)
2
GND (emitter)
3
Simplified outline
Graphic symbol
3
3
R1
output (collector)
1
1
2
R2
2
sym007
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PDTD113ZT
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PDTD113ZT
*7V
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
5
V
VI
input voltage
positive
-
+10
V
negative
-
−5
V
output current
-
500
mA
IO
PDTD113ZT_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
2 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Ptot
total power dissipation
Tamb ≤ 25 °C
-
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
[1]
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to ambient
in free air
[1]
Min
Typ
Max
Unit
-
-
500
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 40 V; IE = 0 A
-
-
100
nA
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 50 V; IB = 0 A
current
-
-
0.5
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
0.8
mA
hFE
DC current gain
VCE = 5 V; IC = 50 mA
70
-
-
VCEsat
collector-emitter
saturation voltage
IC = 50 mA; IB = 2.5 mA
-
-
0.3
V
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA
0.3
0.6
1
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 20 mA
0.4
0.8
1.4
V
kΩ
R1
bias resistor 1 (input)
0.7
1
1.3
R2/R1
bias resistor ratio
9
10
11
Cc
collector capacitance
-
7
-
VCB = 10 V; IE = ie = 0 A;
f = 100 MHz
PDTD113ZT_2
Product data sheet
pF
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
3 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
006aaa314
103
(1)
(2)
(3)
hFE
006aaa315
10−1
(1)
(2)
(3)
VCEsat
(V)
102
10
1
10−1
1
10
102
103
10−2
1
102
10
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
006aaa316
10
103
IC (mA)
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa317
1
(1)
(2)
VI(off)
(V)
VI(on)
(V)
1
(3)
(1)
(2)
(3)
10−1
10−1
1
10
102
103
10−1
10−1
VCE = 0.3 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
On-state input voltage as a function of
collector current; typical values
Fig 4.
Off-state input voltage as a function of
collector current; typical values
PDTD113ZT_2
Product data sheet
10
VCE = 5 V
(2) Tamb = 25 °C
Fig 3.
1
IC (mA)
IC (mA)
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
4 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
8. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
Fig 5.
0.15
0.09
04-11-04
Package outline SOT23 (TO-236AB)
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PDTD113ZT
[1]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-235
For further information and the availability of packing methods, see Section 13.
PDTD113ZT_2
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
5 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
Fig 6.
sot023_fr
Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
Fig 7.
Wave soldering footprint SOT23 (TO-236AB)
PDTD113ZT_2
Product data sheet
sot023_fw
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
6 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PDTD113ZT_2
20090323
Product data sheet
-
PDTD113Z_SER_1
Modifications:
PDTD113Z_SER_1
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Type numbers PDTD113ZK and PDTD113ZS removed
Table 5 “Limiting values”: typo for maximum value of VI positive corrected
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
20050405
Product data sheet
PDTD113ZT_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
7 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PDTD113ZT_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 23 March 2009
8 of 9
PDTD113ZT
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Packing information. . . . . . . . . . . . . . . . . . . . . .
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information. . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
2
3
3
5
5
6
7
8
8
8
8
8
8
9
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 March 2009
Document identifier: PDTD113ZT_2
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