PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC PBRN123YK SOT346 SC-59A TO-236 PBRN123YS[1] SOT54 SC-43A TO-92 PBRN123YT SOT23 - TO-236AB [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features n 800 mA output current capability n Low collector-emitter saturation voltage VCEsat n Reduces component count n Reduces pick and place costs n ±10 % resistor ratio tolerance n High current gain hFE n Built-in bias resistors n Simplifies circuit design 1.3 Applications n Digital application in automotive and industrial segments n Medium current peripheral driver n Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base IO output current Min Typ Max Unit - - 40 V PBRN123YK, PBRN123YT - - 600 mA PBRN123YS - - 800 mA [1] PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Table 2. Quick reference data …continued Symbol Parameter IORM repetitive peak output current Conditions PBRN123YK, PBRN123YT tp ≤ 1 ms; δ ≤ 0.33 Min Typ Max Unit - - 800 mA kΩ R1 bias resistor 1 (input) 1.54 2.2 2.86 R2/R1 bias resistor ratio 4.1 4.55 5 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 3 1 R2 001aab347 3 006aaa145 SOT54A 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 1 R2 3 001aab348 3 006aaa145 SOT54 variant 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 3 1 R2 001aab447 3 006aaa145 SOT23; SOT346 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 006aaa144 PBRN123Y_SER_1 Product data sheet 2 sym007 © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 2 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBRN123YK SC-59A plastic surface-mounted package; 3 leads SOT346 PBRN123YS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads PBRN123YT - plastic surface-mounted package; 3 leads [1] SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Type number Marking code[1] PBRN123YK G7 PBRN123YS N123YS PBRN123YT *7P [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 5 V VI input voltage positive - +22 V negative - −5 V [1] - 600 mA [2][3] - 700 mA [1] - 800 mA - 800 mA IO output current PBRN123YK, PBRN123YT PBRN123YS IORM repetitive peak output current PBRN123YK, PBRN123YT tp ≤ 1 ms; δ ≤ 0.33 PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 3 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Ptot total power dissipation Tamb ≤ 25 °C PBRN123YK, PBRN123YT PBRN123YS Min Max Unit [1] - 250 mW [2] - 370 mW [3] - 570 mW [1] - 700 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa998 600 (1) Ptot (mW) 400 (2) (3) 200 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236) PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 4 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aaa999 800 Ptot (mW) 600 400 200 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 2. Power derating curve for SOT54 (SC-43A/TO-92) 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction in free air to ambient PBRN123YK, PBRN123YT PBRN123YS Rth(j-sp) Typ Max Unit [1] - - 500 K/W [2] - - 338 K/W [3] - - 219 K/W [1] - - 179 K/W - - 105 K/W thermal resistance from junction to solder point PBRN123YK, PBRN123YT [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. PBRN123Y_SER_1 Product data sheet Min © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 5 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab000 103 δ=1 Zth(j-a) (K/W) 0.75 0.50 102 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values 006aab001 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 6 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab002 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values 006aab003 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 1 10−5 0 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54 (SC-43A/TO-92); typical values PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 7 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 0.5 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 0.65 mA hFE DC current gain VCE = 5 V; IC = 50 mA 300 450 - VCEsat collector-emitter saturation voltage VCE = 5 V; IC = 300 mA [1] 500 750 - VCE = 5 V; IC = 600 mA [1] 500 720 - VCE = 5 V; IC = 800 mA [1] 450 650 - IC = 50 mA; IB = 2.5 mA - 25 35 mV IC = 200 mA; IB = 10 mA - 60 85 mV IC = 500 mA; IB = 10 mA [1] - 160 220 mV IC = 600 mA; IB = 6 mA [1] - 270 550 mV IC = 800 mA; IB = 8 mA [1] - 0.56 1.15 V VI(off) off-state input voltage VCE = 5 V; IC = 100 µA 0.4 0.6 1 V VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA 0.5 0.8 1.4 V R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio Cc collector capacitance [1] VCB = 10 V; IE = ie = 0 A; f = 1 MHz 4.55 5 7 - pF Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBRN123Y_SER_1 Product data sheet 4.1 - © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 8 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab022 104 006aab023 10−1 hFE (1) (2) (3) 103 VCEsat (V) (1) (2) 10−2 102 (3) 10 1 10−1 1 102 10 103 10−3 1 102 10 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 7. DC current gain as a function of collector current; typical values 006aab024 1 103 IC (mA) Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 006aab025 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (2) (3) (1) (2) (3) 10−2 1 10 102 103 10−2 1 IC (mA) 102 103 IC (mA) IC/IB = 50 IC/IB = 100 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values PBRN123Y_SER_1 Product data sheet 10 © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 9 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab026 10 VI(on) (V) 006aab027 10 VI(off) (V) (1) 1 (1) 1 (2) (2) (3) (3) 10−1 10−1 1 10 102 103 10−1 10−1 IC (mA) VCE = 0.3 V 102 10 IC (mA) VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 11. On-state input voltage as a function of collector current; typical values Fig 12. Off-state input voltage as a function of collector current; typical values PBRN123Y_SER_1 Product data sheet 1 © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 10 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 8. Package outline 1.3 1.0 3.1 2.7 3 0.45 0.38 4.2 3.6 0.6 0.2 0.48 0.40 3.0 1.7 2.5 1.3 1 2 4.8 4.4 1 2.54 3 1.27 2 0.50 0.35 1.9 0.26 0.10 Dimensions in mm 5.2 5.0 Dimensions in mm 04-11-11 Fig 13. Package outline SOT346 (SC-59A/TO-236) 04-11-16 Fig 14. Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 0.45 0.38 4.2 3.6 14.5 12.7 4.2 3.6 1.27 0.48 0.40 3 max 1 2.5 max 0.48 0.40 1 2 4.8 4.4 5.08 2 4.8 4.4 2.54 2.54 3 1.27 3 5.2 5.0 5.2 5.0 14.5 12.7 Dimensions in mm 04-06-28 14.5 12.7 Dimensions in mm Fig 15. Package outline SOT54A 05-01-10 Fig 16. Package outline SOT54 variant 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 17. Package outline SOT23 (TO-236AB) PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 11 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PBRN123YK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PBRN123YS SOT54 bulk, straight leads - -412 - SOT54A tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 PBRN123YT [1] SOT54 variant bulk, delta pinning - -112 - SOT23 -215 - -235 4 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 13. 10. Soldering 3.30 1.00 0.70 (3x) 0.60 (3x) 0.70 (3x) 3 0.95 3.15 3.40 1.55 0.95 1 2 1.20 2.60 2.90 solder lands solder resist solder paste occupied area sot346 Dimensions in mm Fig 18. Reflow soldering footprint SOT346 (SC-59A/TO-236) PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 12 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 4.70 2.80 solder lands solder resist occupied area Dimensions in mm 3 5.20 4.60 1.20 1 2 sot346 1.20 (2x) 3.40 preferred transport direction during soldering Fig 19. Wave soldering footprint SOT346 (SC-59A/TO-236) 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 0.85 2.70 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 20. Reflow soldering footprint SOT23 (TO-236AB) PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 13 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 21. Wave soldering footprint SOT23 (TO-236AB) PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 14 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBRN123Y_SER_1 20070227 Product data sheet - - PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 15 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 27 February 2007 16 of 17 PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 February 2007 Document identifier: PBRN123Y_SER_1