DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA • Collector current capability IC = −200 mA SYMBOL • Collector-emitter voltage VCEO = −40 V. VCEO collector-emitter voltage −40 V IC collector current (DC) −200 mA PARAMETER MAX. UNIT APPLICATIONS • General switching and amplification. PINNING PIN DESCRIPTION DESCRIPTION 1 base PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. 2 emitter 3 collector MARKING handbook, halfpage MARKING CODE(1) TYPE NUMBER MMBT3906 3 3 7B∗ 1 Note 1. ∗ = p: Made in Hong Kong. 2 ∗ = t: Made in Malaysia. 1 ∗ = W: Made in China. 2 Top view MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −200 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2003 Mar 18 2 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA hFE DC current gain VCE = −1 V; see Fig.2 IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −1 mA − −250 mV IC = −50 mA; IB = −5 mA − −400 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV IC = −50 mA; IB = −5 mA − −950 mV Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 4 dB − 35 ns Switching times (between 10% and 90% levels); see Fig.7 ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA td delay time tr rise time − 35 ns ts storage time − 225 ns tf fall time − 75 ns 2003 Mar 18 3 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 MHC459 600 MHC460 −250 IC (mA) handbook, halfpage handbook, halfpage hFE (3) (1) (2) −200 (1) (4) 400 (5) −150 (6) (7) (2) −100 (8) −50 (10) 200 (9) (3) 0 −10−1 −1 −10 0 −102 −103 IC (mA) −4 −2 0 −6 −8 −10 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) VCE = −1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IB = −1.5 mA. IB = −1.35 mA. IB = −1.2 mA. IB = −1.05 mA. Fig.3 Fig.2 DC current gain; typical values. MHC461 −1200 VBE (5) IB = −0.9 mA. (6) IB = −0.75 mA. (7) IB = −0.6 mA. (8) IB = −0.45 mA. (9) IB = −0.3 mA. (10) IB = −0.15 mA. Collector current as a function of collector-emitter voltage. MHC462 −1200 VBEsat handbook, halfpage handbook, halfpage (mV) (mV) −1000 −1000 (1) (1) −800 (2) −600 −800 (2) −600 (3) (3) −400 −400 −200 −10−1 −1 −10 −102 −200 −10−1 −103 IC (mA) VCE = −1 V. (1) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Base-emitter voltage as a function of collector current. 2003 Mar 18 4 −1 −10 −102 −103 IC (mA) Base-emitter saturation voltage as a function of collector current. NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 MHC463 −103 handbook, halfpage VCEsat (mV) (1) (2) −102 (3) −10 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 10. (1) Tamb = 25 °C. (2) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.7 Test circuit for switching times. 2003 Mar 18 5 oscilloscope NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2003 Mar 18 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 6 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2003 Mar 18 Document order number: 9397 750 10243