Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
MMBT3906
PNP switching transistor
Product data sheet
Supersedes data of 2000 Apr 11
2003 Mar 18
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
FEATURES
QUICK REFERENCE DATA
• Collector current capability IC = −200 mA
SYMBOL
• Collector-emitter voltage VCEO = −40 V.
VCEO
collector-emitter voltage
−40
V
IC
collector current (DC)
−200
mA
PARAMETER
MAX.
UNIT
APPLICATIONS
• General switching and amplification.
PINNING
PIN
DESCRIPTION
DESCRIPTION
1
base
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
2
emitter
3
collector
MARKING
handbook, halfpage
MARKING CODE(1)
TYPE NUMBER
MMBT3906
3
3
7B∗
1
Note
1. ∗ = p: Made in Hong Kong.
2
∗ = t: Made in Malaysia.
1
∗ = W: Made in China.
2
Top view
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−200
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003 Mar 18
2
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−
−50
nA
IEBO
emitter cut-off current
IC = 0; VEB = −6 V
−
−50
nA
hFE
DC current gain
VCE = −1 V; see Fig.2
IC = −0.1 mA
60
−
IC = −1 mA
80
−
IC = −10 mA
100
300
IC = −50 mA
60
−
IC = −100 mA
30
−
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA
−
−250
mV
IC = −50 mA; IB = −5 mA
−
−400
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −1 mA
−
−850
mV
IC = −50 mA; IB = −5 mA
−
−950
mV
Cc
collector capacitance
IE = ie = 0; VCB = −5 V; f = 1 MHz
−
4.5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV;
f = 1 MHz
−
10
pF
fT
transition frequency
IC = −10 mA; VCE = −20 V;
f = 100 MHz
250
−
MHz
F
noise figure
IC = −100 µA; VCE = −5 V;
RS = 1 kΩ; f = 10 Hz to 15.7 kHz
−
4
dB
−
35
ns
Switching times (between 10% and 90% levels); see Fig.7
ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA
td
delay time
tr
rise time
−
35
ns
ts
storage time
−
225
ns
tf
fall time
−
75
ns
2003 Mar 18
3
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
MHC459
600
MHC460
−250
IC
(mA)
handbook, halfpage
handbook, halfpage
hFE
(3)
(1)
(2)
−200
(1)
(4)
400
(5)
−150
(6)
(7)
(2)
−100
(8)
−50
(10)
200
(9)
(3)
0
−10−1
−1
−10
0
−102
−103
IC (mA)
−4
−2
0
−6
−8
−10
VCE (V)
Tamb = 25 °C.
(1)
(2)
(3)
(4)
VCE = −1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IB = −1.5 mA.
IB = −1.35 mA.
IB = −1.2 mA.
IB = −1.05 mA.
Fig.3
Fig.2 DC current gain; typical values.
MHC461
−1200
VBE
(5) IB = −0.9 mA.
(6) IB = −0.75 mA.
(7) IB = −0.6 mA.
(8) IB = −0.45 mA.
(9) IB = −0.3 mA.
(10) IB = −0.15 mA.
Collector current as a function of
collector-emitter voltage.
MHC462
−1200
VBEsat
handbook, halfpage
handbook, halfpage
(mV)
(mV)
−1000
−1000
(1)
(1)
−800
(2)
−600
−800
(2)
−600
(3)
(3)
−400
−400
−200
−10−1
−1
−10
−102
−200
−10−1
−103
IC (mA)
VCE = −1 V.
(1) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current.
2003 Mar 18
4
−1
−10
−102
−103
IC (mA)
Base-emitter saturation voltage as a
function of collector current.
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
MHC463
−103
handbook, halfpage
VCEsat
(mV)
(1)
(2)
−102
(3)
−10
−10−1
−1
−10
−102
IC (mA)
−103
IC/IB = 10.
(1) Tamb = 25 °C.
(2) Tamb = 150 °C.
(3) Tamb = −55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
2003 Mar 18
5
oscilloscope
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 18
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
6
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Mar 18
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/02/pp8
Date of release: 2003 Mar 18
Document order number:
9397 750 10243
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