Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZT2907A
PNP switching transistor
Product data sheet
Supersedes data of 1997 Jun 02
1999 Apr 14
NXP Semiconductors
Product data sheet
PNP switching transistor
PZT2907A
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 60 V).
DESCRIPTION
1
base
2, 4
APPLICATIONS
collector
3
emitter
• Switching and linear amplification.
DESCRIPTION
4
handbook, halfpage
2, 4
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−60
V
VCEO
collector-emitter voltage
open base
−
−60
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
−
1.15
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
1999 Apr 14
Tamb ≤ 25 °C
2
NXP Semiconductors
Product data sheet
PNP switching transistor
PZT2907A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
UNIT
106
K/W
25
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −50 V
−
−10
nA
IE = 0; VCB = −50 V; Tamb = 150 °C
−
−10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−
−50
hFE
DC current gain
IC = −0.1 mA; VCE = −10 V
75
−
IC = −1 mA; VCE = −10 V
100
−
IC = −10 mA; VCE = −10 V
100
−
IC = −150 mA; VCE = −10 V; note 1
100
300
IC = −500 mA; VCE = −10 V; note 1
50
−
IC = −150 mA; IB = −15 mA; note 1
−
−400
mV
IC = −500 mA; IB = −50 mA; note 1
−
−1.6
V
IC = −150 mA; IB = −15 mA; note 1
−
−1.3
V
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
IC = −500 mA; IB = −50 mA; note 1
−
−2.6
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
8
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −2 V; f = 1 MHz
−
30
pF
fT
transition frequency
IC = −50 mA; VCE = −20 V;
f = 100 MHz; note 1
200
−
MHz
−
40
ns
Switching times (between 10% and 90% levels); (see Fig.2)
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA
ton
turn-on time
td
delay time
−
12
ns
tr
rise time
−
30
ns
toff
turn-off time
−
365
ns
ts
storage time
−
300
ns
tf
fall time
−
65
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 14
3
NXP Semiconductors
Product data sheet
PNP switching transistor
PZT2907A
VBB
handbook, full pagewidth
RB
oscilloscope
VCC
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1999 Apr 14
4
oscilloscope
NXP Semiconductors
Product data sheet
PNP switching transistor
PZT2907A
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1999 Apr 14
REFERENCES
IEC
JEDEC
EIAJ
SC-73
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
PNP switching transistor
PZT2907A
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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http://www.nxp.com/profile/terms, including those
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infringement and limitation of liability, unless explicitly
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published in this document, including without limitation
specifications and product descriptions, at any time and
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Export control ⎯ This document as well as the item(s)
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national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 14
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp7
Date of release: 1999 Apr 14
Document order number: 9397 750 05637