Data Sheet

PEMD20; PUMD20
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 2 May 2005
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET).
Table 1:
Product overview
Type number
Package
Philips
JEITA
PNP/PNP
complement
NPN/NPN
complement
PEMD20
SOT666
-
PEMB20
PEMH20
PUMD20
SOT363
SC-88
PUMB20
PUMH20
1.2 Features
■
■
■
■
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
50
V
IO
output current (DC)
-
-
100
mA
R1
bias resistor 1 (input)
1.54
2.2
2.86
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3:
Pinning
Pin
Description
Simplified outline
1
GND (emitter) TR1
2
input (base) TR1
3
output (collector) TR2
4
GND (emitter) TR2
5
input (base) TR2
6
output (collector) TR1
6
5
4
Symbol
6
5
R1
4
R2
TR2
1
2
3
TR1
001aab555
R2
1
R1
2
3
006aaa143
3. Ordering information
Table 4:
Ordering information
Type number
Package
Name
Description
Version
PEMD20
-
plastic surface mounted package; 6 leads
SOT666
PUMD20
SC-88
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 5:
Marking codes
Type number
Marking code [1]
PEMD20
6H
PUMD20
T6*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14419
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
2 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage TR1
positive
-
+12
V
negative
-
−10
V
positive
-
+10
V
negative
input voltage TR2
-
−12
V
IO
output current (DC)
-
100
mA
ICM
peak collector current
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1]
-
200
mW
SOT666
[1] [2]
-
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1]
-
300
mW
SOT666
[1] [2]
-
300
mW
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
9397 750 14419
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
3 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
thermal resistance from
junction to ambient
Rth(j-a)
in free air
SOT363
[1]
-
-
625
K/W
SOT666
[1] [2]
-
-
625
K/W
SOT363
[1]
-
-
416
K/W
SOT666
[1] [2]
-
-
416
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
100
nA
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
1
µA
VCE = 30 V; IB = 0 A;
Tj = 150 °C
-
-
50
µA
mA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
2
hFE
DC current gain
VCE = 5 V; IC = 20 mA
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input
voltage
VCE = 5 V; IC = 1 mA
-
1.2
0.5
V
VI(on)
on-state input
voltage
VCE = 0.3 V; IC = 20 mA
2
1.6
-
V
R1
bias resistor 1 (input)
1.54
2.2
2.86
kΩ
R2/R1
bias resistor ratio
0.8
1
1.2
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
TR1 (NPN)
-
-
2.5
pF
TR2 (PNP)
-
-
3
pF
9397 750 14419
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
4 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
006aaa015
103
006aaa014
103
hFE
(1)
(2)
(3)
102
VCEsat
(mV)
102
(1)
(2)
(3)
10
1
10−1
1
102
10
10
1
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
006aaa016
102
102
10
IC (mA)
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa017
10
VI(on)
(V)
VI(off)
(V)
10
(1)
1
1
(3)
(1)
(2)
(3)
10−1
10−1
(2)
1
102
10
10−1
10−2
IC (mA)
1
10
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14419
Product data sheet
10−1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
5 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
006aaa192
103
006aaa193
−103
hFE
VCEsat
(mV)
(1)
102
(2)
(1)
(3)
(2)
(3)
−102
10
1
−10−1
−1
−10
−102
−10
−1
−102
−10
IC (mA)
IC (mA)
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 5. TR2 (PNP): DC current gain as a function of
collector current; typical values
006aaa194
−102
Fig 6. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa195
−10
VI(on)
(V)
VI(off)
(V)
−10
(1)
(1)
−1
(2)
(2)
(3)
−1
−10−1
−10−1
(3)
−1
−10
−102
−10−1
−10−2
−10−1
IC (mA)
−10
IC (mA)
VCE = −0.3 V
VCE = −5 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 7. TR2 (PNP): On-state input voltage as a function
of collector current; typical values
Fig 8. TR2 (PNP): Off-state input voltage as a function
of collector current; typical values
9397 750 14419
Product data sheet
−1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
6 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
8. Package outline
2.2
1.8
6
1.1
0.8
5
1.7
1.5
0.45
0.15
4
6
0.6
0.5
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7
1.5
pin 1
index
1.3
1.1
pin 1 index
1
2
3
1
0.25
0.10
0.3
0.2
0.65
2
3
0.18
0.08
0.27
0.17
0.5
1.3
1
Dimensions in mm
04-11-08
Fig 9. Package outline SOT363 (SC-88)
Dimensions in mm
04-11-08
Fig 10. Package outline SOT666
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
PEMD20
2 mm pitch, 8 mm tape and reel
SOT666
Packing quantity
4 mm pitch, 8 mm tape and reel
PUMD20
SOT363
8000 10000
-
-
-315
-
-
-115
-
-
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-
-165
[1]
For further information and the availability of packing methods, see Section 15.
[2]
T1: normal taping
[3]
T2: reverse taping
9397 750 14419
Product data sheet
3000 4000
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
7 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10. Revision history
Table 10:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
PEMD20_PUMD20_1
20050502
Product data sheet
-
9397 750 14419
-
9397 750 14419
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
8 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Trademarks
13. Disclaimers
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14419
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 2 May 2005
9 of 10
PEMD20; PUMD20
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
16. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
General description. . . . . . . . . . . . . . . . . . . . . .
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quick reference data. . . . . . . . . . . . . . . . . . . . .
Pinning information . . . . . . . . . . . . . . . . . . . . . .
Ordering information . . . . . . . . . . . . . . . . . . . . .
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal characteristics. . . . . . . . . . . . . . . . . . .
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . .
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
Packing information. . . . . . . . . . . . . . . . . . . . . .
Revision history . . . . . . . . . . . . . . . . . . . . . . . . .
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Contact information . . . . . . . . . . . . . . . . . . . . .
1
1
1
1
1
2
2
2
3
4
4
7
7
8
9
9
9
9
9
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 2 May 2005
Document number: 9397 750 14419
Published in The Netherlands
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