Data Sheet

PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 11 — 25 September 2013
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic
packages.
Table 1.
Product overview
Type number
Package
JEITA
PNP/PNP
complement
NPN/NPN
complement
Package
configuration
NXP
PEMD3
SOT666
-
PEMB11
PEMH11
ultra small and flat lead
PIMD3
SOT457
SC-74
-
-
small
PUMD3
SOT363
SC-88
PUMB11
PUMH11
very small
1.2 Features and benefits
 100 mA output current capability
 Built-in bias resistors
 Simplifies circuit design
 Reduces component count
 Reduces pick and place costs
 AEC-Q101 qualified
1.3 Applications
 Low current peripheral driver
 Control of IC inputs
 Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
50
V
Per transistor; for the PNP transistor (TR2) with negative polarity
VCEO
collector-emitter voltage
open base
-
IO
output current
-
-
100
mA
R1
bias resistor 1 (input)
7
10
13
k
R2/R1
bias resistor ratio
0.8
1
1.2
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
1
GND (emitter) TR1
2
input (base) TR1
3
output (collector) TR2
4
GND (emitter) TR2
5
input (base) TR2
6
output (collector) TR1
6
5
4
Graphic symbol
6
5
R1
4
R2
TR2
1
2
3
TR1
R2
001aab555
1
R1
2
3
006aaa143
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PEMD3
-
plastic surface-mounted package; 6 leads
SOT666
PIMD3
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
PUMD3
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 5.
Type number
Marking code[1]
PEMD3
D3
PIMD3
M7
PUMD3
D*3
[1]
PEMD3_PIMD3_PUMD3
Product data sheet
Marking codes
* = placeholder for manufacturing site code.
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
2 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage TR1
positive
-
+40
V
negative
-
10
V
positive
-
+10
V
input voltage TR2
negative
-
40
V
IO
output current
-
100
mA
ICM
peak collector current
-
100
mA
total power dissipation
Ptot
Tamb  25 C
[1]
PEMD3 (SOT666)
-
200
mW
PIMD3 (SOT457)
-
250
mW
PUMD3 (SOT363)
-
200
mW
PEMD3 (SOT666)
-
300
mW
PIMD3 (SOT457)
-
400
mW
PUMD3 (SOT363)
-
300
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
65
+150
C
Tstg
storage temperature
65
+150
C
Per device
total power dissipation
Ptot
[1]
PEMD3_PIMD3_PUMD3
Product data sheet
Tamb  25 C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
3 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
006aac766
500
Ptot
(mW)
(1)
400
(2)
300
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
(1) SOT457; FR4 PCB, standard footprint
(2) SOT363 and SOT666; FR4 PCB, standard footprint
Fig 1.
Per device: Power derating curves
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
PEMD3 (SOT666)
-
-
625
K/W
PIMD3 (SOT457)
-
-
500
K/W
PUMD3 (SOT363)
-
-
625
K/W
PEMD3 (SOT666)
-
-
417
K/W
PIMD3 (SOT457)
-
-
313
K/W
PUMD3 (SOT363)
-
-
417
K/W
Per device
Rth(j-a)
[1]
PEMD3_PIMD3_PUMD3
Product data sheet
thermal resistance from
junction to ambient
in free air
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
4 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
006aac751
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.2
102
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for
PEMD3 (SOT666); typical values
006aac767
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
102
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration for
PIMD3 (SOT457); typical values
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
5 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
006aac750
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.33
0.2
102
0.1
0.05
0.02
10
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration for
PUMD3 (SOT363); typical values
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
6 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
ICBO
collector-base
cut-off current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
1
A
VCE = 30 V; IB = 0 A;
Tj = 150 C
-
-
5
A
IEBO
emitter-base
cut-off current
VEB = 5 V; IC = 0 A
-
-
400
A
hFE
DC current gain
VCE = 5 V; IC = 5 mA
30
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input
voltage
VCE = 5 V; IC = 100 A
-
1.1
0.8
V
VI(on)
on-state input
voltage
VCE = 0.3 V; IC = 10 mA
2.5
1.8
-
V
R1
bias resistor 1 (input)
7
10
13
k
R2/R1
bias resistor ratio
0.8
1
1.2
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
-
2.5
pF
-
-
3
pF
TR1 (NPN)
-
230
-
MHz
TR2 (PNP)
-
180
-
MHz
TR1 (NPN)
TR2 (PNP)
fT
[1]
PEMD3_PIMD3_PUMD3
Product data sheet
transition frequency
VCB = 5 V; IC = 10 mA;
f = 100 MHz
[1]
Characteristics of built-in transistor.
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
7 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
006aac768
103
hFE
006aac769
1
(1)
VCEsat
(V)
(2)
(3)
102
10-1
(1)
10
(2)
(3)
1
10-1
1
102
10
10-2
1
102
10
IC (mA)
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 5.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 6.
006aac770
10
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
006aac771
10
VI(off)
(V)
VI(on)
(V)
(1)
(1)
(2)
1
(2)
1
(3)
10-1
10-1
1
(3)
102
10
10-1
10-1
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
TR1 (NPN): On-state input voltage as a
function of collector current; typical values
PEMD3_PIMD3_PUMD3
Product data sheet
10
IC (mA)
(1) Tamb = 40 C
Fig 7.
1
Fig 8.
TR1 (NPN): Off-state input voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
8 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
006aac772
3
Cc
(pF)
006aac757
103
fT
(MHz)
2
102
1
0
0
10
20
30
40
50
VCB (V)
10
10-1
102
10
IC (mA)
f = 1 MHz; Tamb = 25 C
Fig 9.
1
VCE = 5 V; Tamb = 25 C
TR1 (NPN): Collector capacitance as a function
of collector-base voltage; typical values
006aac773
103
hFE
Fig 10. TR1 (NPN): Transition frequency as a function
of collector current; typical values of built-in
transistor
006aac774
-1
(1)
VCEsat
(V)
(2)
(3)
102
-10-1
(1)
10
(2)
(3)
1
-10-1
-1
-102
-10
-10-2
-1
IC (mA)
IC (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 40 C
(3) Tamb = 40 C
Fig 11. TR2 (PNP): DC current gain as a function of
collector current; typical values
PEMD3_PIMD3_PUMD3
Product data sheet
-102
-10
Fig 12. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
9 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
006aac775
-10
006aac776
-10
VI(off)
(V)
VI(on)
(V)
(1)
(1)
(2)
(2)
-1
-1
(3)
-10-1
-10-1
-1
-102
-10
(3)
-10-1
-10-1
-1
IC (mA)
-10
IC (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = 40 C
(1) Tamb = 40 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 100 C
Fig 13. TR2 (PNP): On-state input voltage as a
function of collector current; typical values
006aac777
6
Cc
(pF)
Fig 14. TR2 (PNP): Off-state input voltage as a
function of collector current; typical values
006aac763
103
fT
(MHz)
4
102
2
0
0
-10
-20
-30
-40
-50
VCB (V)
f = 1 MHz; Tamb = 25 C
Product data sheet
-1
-102
-10
IC (mA)
VCE = 5 V; Tamb = 25 C
Fig 15. TR2 (PNP): Collector capacitance as a function
of collector-base voltage; typical values
PEMD3_PIMD3_PUMD3
10
-10-1
Fig 16. TR2 (PNP): Transition frequency as a function
of collector current; typical values of built-in
transistor
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
10 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.7
1.5
6
3.1
2.7
0.6
0.5
5
6
4
1.1
0.9
5
4
2
3
0.6
0.2
0.3
0.1
1.7
1.5
3.0
2.5
1.3
1.1
1.7
1.3
pin 1 index
1
2
1
3
0.18
0.08
0.27
0.17
0.5
pin 1 index
0.40
0.25
0.95
1
0.26
0.10
1.9
Dimensions in mm
Dimensions in mm
04-11-08
Fig 17. Package outline PEMD3 (SOT666)
04-11-08
Fig 18. Package outline PIMD3 (SOT457/SC-74)
2.2
1.8
6
2.2 1.35
2.0 1.15
1.1
0.8
5
4
2
3
0.45
0.15
pin 1
index
1
0.3
0.2
0.65
0.25
0.10
1.3
Dimensions in mm
06-03-16
Fig 19. Package outline PUMD3 (SOT363/SC-88)
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
11 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
10. Soldering
3.45
1.95
0.45 0.55
(6×) (6×)
0.95
solder lands
solder resist
3.3 2.825
0.95
solder paste
occupied area
0.7
(6×)
Dimensions in mm
0.8
(6×)
2.4
sot457_fr
Fig 20. Reflow soldering footprint PIMD3 (SOT457/SC-74)
5.3
1.5
(4×)
solder lands
1.475
0.45
(2×)
5.05
solder resist
occupied area
1.475
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 21. Wave soldering footprint PIMD3 (SOT457/SC-74)
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
12 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig 22. Reflow soldering footprint PUMD3 (SOT363/SC-88)
1.5
solder lands
0.3 2.5
4.5
solder resist
occupied area
1.5
Dimensions in mm
1.3
1.3
preferred transport
direction during soldering
2.45
5.3
sot363_fw
Fig 23. Wave soldering footprint PUMD3 (SOT363/SC-88)
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
13 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
2.75
2.45
2.1
1.6
solder lands
0.4
(6×) 0.25
(2×)
0.538
2
1.7 1.075
0.3
(2×)
0.55
(2×)
placement area
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
(4×)
0.6
(2×)
0.5
(4×)
0.65
(2×)
sot666_fr
Fig 24. Reflow soldering footprint PEMD3 (SOT666)
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
14 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PEMD3_PIMD3_
PUMD3 v.11
20130925
Product data sheet
-
PEMD3_PIMD3_
PUMD3 v.10
Modifications:
PEMD3_PIMD3_
PUMD3 v.10
•
•
•
•
•
•
•
•
•
•
Section 1 “Product profile”: updated
Section 4 “Marking”: updated
Table 6 “Limiting values”: Ptot updated according to the latest measurements
Table 7 “Thermal characteristics”: updated according to the latest measurements
Table 8 “Characteristics”: ICEO updated according to the latest measurements, fT added
Figure 1 to 3, 9, 10, 15 and 16: added
Figure 5 to 8 and Figure 11 to 14: updated
Section 8 “Test information”: added
Section 10 “Soldering”: added
Section 12 “Legal information”: updated
20091115
Product data sheet
-
PEMD3_PIMD3_
PUMD3 v.9
PEMD3_PIMD3_ PUMD3 v.9 20050518
Product data sheet
-
PEMD3_PIMD3_
PUMD3 v.8
PEMD3_PIMD3_ PUMD3 v.8 20041206
Product data sheet
-
PEMD3_PUMD3 v.7
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
15 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PEMD3_PIMD3_PUMD3
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
16 of 18
PEMD3; PIMD3; PUMD3
NXP Semiconductors
NPN/PNP resistor-equipped transistors
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PEMD3_PIMD3_PUMD3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
17 of 18
NXP Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . 11
Quality information . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15
Legal information. . . . . . . . . . . . . . . . . . . . . . . 16
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 September 2013
Document identifier: PEMD3_PIMD3_PUMD3
Similar pages