Data Sheet

PEMD17; PUMD17
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
Rev. 03 — 24 January 2005
Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1:
Product overview
Type number
Package
PNP/PNP
complement
NPN/NPN
complement
Philips
JEITA
PEMD17
SOT666
-
PEMB17
PEMH17
PUMD17
SOT363
SC-88
PUMB17
PUMH17
1.2 Features
■
■
■
■
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place cost
1.3 Applications
■ Low current peripheral driver
■ Control of IC inputs
■ Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
50
V
IO
output current (DC)
-
-
100
mA
R1
bias resistor 1 (input)
33
47
61
kΩ
R2/R1
bias resistor ratio
0.37
0.47
0.57
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
2. Pinning information
Table 3:
Pinning
Pin
Description
Simplified outline
1
GND (emitter) TR1
2
input (base) TR1
3
output (collector) TR2
4
GND (emitter) TR2
5
input (base) TR2
6
output (collector) TR1
6
5
4
Symbol
6
5
R1
4
R2
TR2
1
2
3
TR1
001aab555
R2
1
R1
2
3
006aaa143
3. Ordering information
Table 4:
Ordering information
Type number
Package
Name
Description
Version
PEMD17
-
plastic surface mounted package; 6 leads
SOT666
PUMD17
SC-88
plastic surface mounted package; 6 leads
SOT363
4. Marking
Table 5:
Marking codes
Type number
Marking code [1]
PEMD17
5N
PUMD17
D9*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
2 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
-
50
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
10
V
VI
input voltage TR1
positive
-
+40
V
negative
-
−10
V
positive
-
+10
V
negative
input voltage TR2
VI
-
−40
V
IO
output current (DC)
-
100
mA
ICM
peak collector current
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1]
-
200
mW
SOT666
[1] [2]
-
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT363
[1]
-
300
mW
SOT666
[1] [2]
-
300
mW
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
3 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
6. Thermal characteristics
Table 7:
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
SOT363
[1]
-
-
625
K/W
SOT666
[1] [2]
-
-
625
K/W
SOT363
[1]
-
-
416
K/W
SOT666
[1] [2]
-
-
416
K/W
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Tamb ≤ 25 °C
[1]
Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
100
nA
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off
current
ICEO
collector-emitter
cut-off current
VCB = 50 V; IE = 0 A
VCE = 30 V; IB = 0 A
-
-
1
µA
VCE = 30 V; IB = 0 A;
Tj = 150 °C
-
-
50
µA
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
110
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
-
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
-
-
150
mV
VI(off)
off-state input voltage
VCE = 5 V; IC = 100 µA
-
1.7
1.2
V
VI(on)
on-state input voltage
VCE = 0.3 V; IC = 2 mA
4
2.7
-
V
R1
bias resistor 1 (input)
33
47
61
kΩ
R2/R1
bias resistor ratio
0.37
0.47
0.57
Cc
collector capacitance
TR1 (NPN)
-
-
2.5
pF
TR2 (PNP)
-
-
3
pF
VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
4 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
006aaa184
103
(2)
hFE
006aaa185
102
(1)
VCEsat
(mV)
(3)
(1)
102
(2)
(3)
10
1
10−1
1
102
10
10
10−1
1
102
10
I C (mA)
I C (mA)
VCE = 5 V
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
006aaa186
102
VI(on)
(V)
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
VI(off)
(V)
10
(2)
006aaa187
10
(1)
(1)
(2)
1
(3)
(3)
1
10−1
10−1
1
102
10
10−1
10−2
IC (mA)
1
10
I C (mA)
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14367
Product data sheet
10−1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
5 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
006aaa208
103
006aaa209
−102
hFE
(1)
102
(2)
VCEsat
(mV)
(1)
(2)
(3)
(3)
10
1
−10−1
−1
−10
−102
−10
−10−1
−1
−10
IC (mA)
−102
IC (mA)
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(3) Tamb = −40 °C
Fig 5. TR2 (PNP): DC current gain as a function of
collector current; typical values
006aaa210
−102
VI(on)
(V)
Fig 6. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa211
−10
VI(off)
(V)
−10
(1)
(1)
(2)
(2)
(3)
(3)
−1
−1
−10−1
−10−1
−1
−10
−102
−10−1
−10−2
−10−1
IC (mA)
−10
IC (mA)
VCE = −0.3 V
VCE = −5 V
(1) Tamb = −40 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Fig 7. TR2 (PNP): On-state input voltage as a function
of collector current; typical values
Fig 8. TR2 (PNP): Off-state input voltage as a function
of collector current; typical values
9397 750 14367
Product data sheet
−1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
6 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
8. Package outline
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
c
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
SOT363
JEDEC
JEITA
SC-88
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-11-08
Fig 9. Package outline SOT363 (SC-88)
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
7 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
01-08-27
04-11-08
SOT666
Fig 10. Package outline SOT666
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
8 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number
Package
[1]
Description
Packing quantity
3000
4000
10000
PEMD17
SOT666
4 mm pitch, 8 mm tape and reel
-
-115
-
PUMD17
SOT363
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-
-135
PUMD17
SOT363
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
9 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
10. Revision history
Table 10:
Revision history
Document ID
Release date
PEMD17_PUMD17_3 20050124
Modifications:
Data sheet status
Change notice
Doc. number
Supersedes
Product data sheet
-
9397 750 14367
PUMD17_2
•
•
This data sheet is an enhancement of data sheet PUMD17_2.
•
•
Type PEMD17 added
•
•
Figure 1, 2, 3, 4, 5, 6, 7 and 8 electrical graphs for TR1 (NPN) and TR2 (PNP) added
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Table 8 Characteristics: Vi(on) input-on voltage and Vi(off) input-off voltage renamed to VI(on)
on-state input voltage and VI(off) off-state input voltage
Table 9 Packing information added
PUMD17_2
20040422
Product specification -
9397 750 13099
PUMD17_1
PUMD17_1
20031016
Product specification -
9397 750 11866
-
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
10 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
11. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14367
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 03 — 24 January 2005
11 of 12
PEMD17; PUMD17
Philips Semiconductors
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 24 January 2005
Document number: 9397 750 14367
Published in The Netherlands
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