HCTS191MS Radiation Hardened Synchronous 4-Bit Up/Down Counter September 1995 Features Pinouts • • • • 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW • • • • • • • • • • 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset: >1010 RAD (Si)/s 20ns Pulse Cosmic Ray Upset Immunity 2 x 10-9 Errors/Bit Day Latch-Up Free Under Any Conditions Fanout (Over Temperature Range) - Standard Outputs - 10 LSTTL Loads Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min Input Current Levels Ii ≤ 5µA @ VOL, VOH 1 16 VCC 2 15 P0 Q0 3 14 CP CE 4 13 RC U/D 5 12 TC Q2 6 11 PL Q3 7 10 P2 GND 8 9 P3 16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 TOP VIEW Description The Intersil HCTS191MS is a Radiation Hardened asynchronously presettable 4 bit binary up/down synchronous counter. Presetting the counter to the number on the preset data inputs (P0 - P3) is accomplished by a low asynchronous parallel load input (PL). Counting occurs when PL is high, Count Enable (CE) is low, and the Up/Down (U/D) input is either low for up-counting or high for down-counting. The counter is incremented or decremented synchronously with the low-to-high transition of the clock. When an overflow or underflow of the counter occurs, the Terminal Count output (TC), which is low during counting, goes high and remains high for one clock cycle. This output can be used for look-ahead carry in high speed cascading. The TC output also initiates the Ripple Clock output (RC) which, normally high, goes low and remains low for the low-level portion of the clock pulse. These counter can be cascaded using the Ripple Carry output. The HCTS191MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS191MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). P1 Q1 P1 1 16 VCC Q1 2 15 P0 Q0 3 14 CP CE 4 13 RC U/D 5 12 TC Q2 6 11 PL Q3 7 10 P2 GND 8 9 P3 TRUTH TABLE FUNCTION PL CE U/D CP Count Up H L L Count Down H L H Asynchronous Preset L X X X No Change H H X X H = High Level, L = Low Level, X = Immaterial = Transition from low to high NOTE: U/D or CE should be changed only when CLOCK (CP) is high. Ordering Information TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCTS191DMSR -55oC +125oC Intersil Class S Equivalent 16 Lead SBDIP HCTS191KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack HCTS191D/Sample +25oC Sample 16 Lead SBDIP HCTS191K/Sample +25oC Sample 16 Lead Ceramic Flatpack HCTS191HMSR +25oC Die Die to CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 580 Spec Number File Number 518621 2250.2 DB NA PART NUMBER 13 RC 5 U/D Functional Diagram 14 CP 12 11 TC PD PL 581 T PL P Q T PL P Q T HCTS191MS PL P P Q T Q CP Q CP Q CP Q CP Q FF0 FF1 FF2 FF3 Spec Number 4 CE 518621 3 Q0 2 Q1 6 Q2 7 Q3 Specifications HCTS191MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .500ns Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 µA 1 +25oC 4.8 - mA 2, 3 +125oC, -55oC 4.0 - mA 1 +25oC -4.8 - mA 2, 3 +125oC, -55oC -4.0 - mA VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - 5.0 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2) LIMITS NOTES: 1. All voltages reference to device GND. 2. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 582 518621 Specifications HCTS191MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER PL to Qn SYMBOL TPLH TPHL Pn to Qn TPLH TPHL CP to Qn TPLH TPHL CP to RC TPLH TPHL CP to TC TPLH TPHL U/D to RC TPLH TPHL U/D to TC TPLH TPHL CE to RC (NOTES 1, 2) CONDITIONS TPLH TPHL GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 34 ns 10, 11 +125oC, -55oC 2 37 ns VCC = 4.5V VCC = 4.5V LIMITS o 9 +25 C 2 44 ns 10, 11 +125oC, -55oC 2 49 ns VCC = 4.5V o 9 +25 C 2 27 ns 10, 11 +125oC, -55oC 2 31 ns VCC = 4.5V o 9 +25 C 2 39 ns 10, 11 +125oC, -55oC 2 45 ns VCC = 4.5V o 9 +25 C 2 26 ns 10, 11 +125oC, -55oC 2 30 ns 9 +25oC 2 29 ns 10, 11 +125oC, -55oC 2 33 ns 9 +25oC 2 20 ns 10, 11 +125oC, -55oC 2 23 ns 9 +25oC 2 32 ns 10, 11 +125oC, -55oC 2 34 ns 9 +25oC 2 37 ns 10, 11 +125oC, -55oC 2 42 ns 9 +25oC 2 40 ns 10, 11 +125oC, -55oC 2 46 ns 9 +25oC 2 42 ns 10, 11 +125oC, -55oC 2 45 ns 9 +25oC 2 38 ns 10, 11 +125oC, -55oC 2 43 ns 9 +25oC 2 34 ns 10, 11 +125oC, -55oC 2 38 ns 9 +25oC 2 42 ns 10, 11 +125oC, -55oC 2 45 ns 9 +25oC 2 22 ns 10, 11 +125oC, -55oC 2 25 ns 9 +25oC 2 35 ns 10, 11 +125oC, -55oC 2 38 ns VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. Spec Number 583 518621 Specifications HCTS191MS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance Output Transition Time Maximum Operating Frequency (CPU, CPD) Setup Time Pn to PL Setup Time CE to CP Setup Time U/D to CP Hold Time Pn to PL Hold Time CE to CP Hold Time U/D to CP Recovery Time CP Pulse Width PL Pulse Width CIN TTHL TTLH FMAX TSU TSU TSU TH TH TH TREC TW TW CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 +25oC - 54 pF 1 +125oC, -55oC - 84 pF 1 +25oC - 10 pF 1 +125oC - 10 pF 1 +25oC - 15 ns 1 +125oC, -55oC - 22 ns 1 +25oC - 30 MHz 1 +125oC, -55oC - 20 MHz 1 +25oC 12 - ns 1 +125oC, -55oC 18 - ns 1 +25oC 12 - ns 1 +125oC, -55oC 18 - ns 1 +25oC 18 - ns 1 +125oC, -55oC 27 - ns 1 +25oC 2 - ns 1 +125oC, -55oC 2 - ns 1 +25oC 2 - ns 1 +125oC, -55oC 2 - ns 1 +25oC 0 - ns 1 +125oC, -55oC 0 - ns 1 +25oC 12 - ns 1 +125oC, -55oC 18 - ns 1 +25oC 16 - ns 1 +125oC, -55oC 24 - ns 1 +25oC 20 - ns 1 +125oC, -55oC 30 - ns VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Spec Number 584 518621 Specifications HCTS191MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current (NOTES 1, 2) CONDITIONS SYMBOL ICC 200K RAD LIMITS TEMPERATURE MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA 4.0 - mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -4.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50µA +25oC - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50µA +25oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA VCC = 4.5V, VIH = 2.25V, VIL = 0.8V , (Note 3) +25oC - - - TPLH VCC = 4.5V +25oC 2 37 ns TPHL VCC = 4.5V +25oC 2 49 ns TPLH VCC = 4.5V +25oC 2 31 ns TPHL VCC = 4.5V +25oC 2 45 ns TPLH VCC = 4.5V +25oC 2 30 ns TPHL VCC = 4.5V +25oC 2 33 ns TPLH VCC = 4.5V +25oC 2 23 ns TPHL VCC = 4.5V +25oC 2 34 ns TPLH VCC = 4.5V +25oC 2 42 ns TPHL VCC = 4.5V +25oC 2 46 ns TPLH VCC = 4.5V +25oC 2 45 ns TPHL VCC = 4.5V +25oC 2 43 ns TPLH VCC = 4.5V +25oC 2 38 ns TPHL VCC = 4.5V +25oC 2 45 ns TPLH VCC = 4.5V +25oC 2 25 ns TPHL VCC = 4.5V +25oC 2 38 ns Input Leakage Current Noise Immunity Functional Test PL to Qn Pn to Qn CP to Qn Cp to RC CP to TC U/D to RC U/D to TC CE to RC IIN FN NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 12µA IOL/IOH 5 -15% of 0 Hour PARAMETER Spec Number 585 518621 Specifications HCTS191MS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/H Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A testing in accordance with method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1,9 Table 4 (Note 1) Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN 1/2 VCC = 3V ± 0.5V GROUND VCC = 6V ± 0.5V 50kHz 25kHz - 16 - - - 1, 4, 5, 9 - 11, 14 - 16 - - 2, 3, 6, 7, 12, 13 11, 16 14 - STATIC BURN-IN I TEST CONNECTIONS (Note 1) 2, 3, 6, 7, 12, 13 1, 4, 5, 8 - 11, 14, 15 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 2, 3, 6, 7, 12, 13 8 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) - 1, 4, 5, 8 - 10, 15 NOTES: 1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in 2. Each pin except VCC and GND will have a resistor of 1kΩ ± 5% for dynamic burn-in TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 2, 3, 6, 7, 12, 13 8 1, 4, 5, 9 - 11, 14 - 16 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 586 518621 HCTS191MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 587 518621 HCTS191MS AC Timing Diagrams AC Load Circuit VIH DUT TEST POINT INPUT VS VIL CL RL TPLH TPHL VOH VS CL = 50pF OUTPUT RL = 500Ω VOL VOH TTLH TTHL 80% VOL 20% 80% 20% OUTPUT AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VIL 0 V GND 0 V All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 588 518621 HCTS191MS Die Characteristics DIE DIMENSIONS: 104 x 86 mils METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: < 2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCTS191MS Q1 (2) P1 (1) VCC (16) (15) P0 Q0 (3) (14) CP CE (4) (13) RC U/D (5) (12) TC Q2 (6) (11) PL Q3 (7) (8) GND (9) P3 (10) P2 NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS191 is TA14447A. Spec Number 589 518621