LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA12B/3I7G DATA SHEET DOC. NO : QW0905-LA12B/3I7G REV. : B DATE : 11 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 1/5 Package Dimensions I I I G G G G G G G 70.7±0.5 6.1 5.2 1.3 3.75 7.0X9=63.0 8.5 6.0 □0.5 TYP 1.0MIN 13.5MIN 2.3TYP - + LI5620 LG5620 6.2 3.0 1.4 6.0 8.0 1.5MAX 12.5MIN □0.5 TYP 2.3TYP 1.0MIN Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/5 PART NO. LA12B/3I7G Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT I G Forward Current IF 30 30 mA Peak Forward Current Duty 1/10@10KHz IFP 120 120 mA Power Dissipation PD 100 100 mW Reverse Current @5V Ir 10 μA Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted Forward Peak Spectral voltage wave halfwidth length △λ nm @ 20mA(V) λPnm Lens GaAsP/GaP Orange Red Diffused Luminous intensity @10mA(mcd) Min. Max. Min. Typ. Viewing angle 2θ 1/2 (deg) 635 45 1.7 2.6 0.8 1.8 142 565 30 1.7 2.6 0.8 1.8 142 LA12B/3I7G GaP Green Green Diffused Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/5 PART NO. LA12B/3I7G Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 650 700 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 Ambient Temperature( ℃) Ambient Temperature(℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 750 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/5 PART NO. LA12B/3I7G Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA12B/3I7G Page 5/5 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11