Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
PUMF12
PNP general purpose transistor;
NPN resistor-equipped transistor
Product data sheet
2002 Nov 07
NXP Semiconductors
Product data sheet
PNP general purpose transistor; NPN
resistor-equipped transistor
FEATURES
PUMF12
QUICK REFERENCE DATA
• General purpose transistor and resistor equipped
transistor in one package
SYMBOL
PARAMETER
MAX.
UNIT
• 100 mA collector current
TR1 (PNP)
• 50 V collector-emitter voltage
VCEO
collector-emitter voltage
−50
V
IC
collector current (DC)
−100
mA
• SOT363 package; replaces two SOT323 (SC-70)
packaged devices on same PCB area
ICM
peak collector current
−200
mA
• Reduced pick and place costs.
VCEO
collector-emitter voltage
50
V
IO
output current (DC)
100
mA
APPLICATIONS
R1
bias resistor
22
kΩ
• Power management switch for portable equipment,
e.g. cellular phone and CD player
R2
bias resistor
47
kΩ
• 300 mW total power dissipation
TR2 (NPN)
• Switch for regulator.
PINNING
PIN
DESCRIPTION
DESCRIPTION
1, 4
emitter
TR1; TR2
PNP general purpose transistor and an NPN
resistor-equipped transistor in a SOT363 (SC-88) plastic
package.
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MARKING
TYPE NUMBER
PUMF12
6
5
6
handbook, halfpage
MARKING CODE(1)
5
4
4
R2∗
R1
R2
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
TR2
TR1
1
Top view
2
3
MCE153
1
2
3
Fig.1 Simplified outline (SOT363) and symbol.
2002 Nov 07
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor; NPN
resistor-equipped transistor
PUMF12
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
−
200
mW
storage temperature range
−65
+150
°C
junction temperature
−
150
°C
operating ambient temperature
−65
+150
°C
Ptot
total power dissipation
Tstg
Tj
Tamb
Tamb ≤ 25 °C; note 1
TR1 (PNP)
VCBO
collector-base voltage
open emitter
−
−50
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
TR2 (NPN)
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
Vi
input voltage
positive
−
+40
V
negative
−
−10
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
−
300
mW
Per device
Ptot
Tamb ≤ 25 °C; note 1
total power dissipation
Note
1. Device mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Nov 07
3
VALUE
UNIT
416
K/W
NXP Semiconductors
Product data sheet
PNP general purpose transistor; NPN
resistor-equipped transistor
PUMF12
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCB = −30 V; IE = 0
−
−
−100
nA
TR1 (PNP)
ICBO
collector cut-off current
VCB = −30 V; IE = 0; Tj = 150 °C
−
−
−10
µA
IEBO
emitter cut-off current
VEB = −4 V; IC = 0
−
−
−100
nA
VCEsat
saturation voltage
IC = −50 mA; IB = −5 mA; note 1
−
−
−200
mV
hFE
DC current gain
VCE = −6 V; IC = −1 mA
120
−
−
Cc
collector capacitance
VCB = −12 V; IE = ie = 0; f = 1 MHz
−
−
2.2
pF
fT
transition frequency
VCE = −12 V; IC = −2 mA; f = 100 MHz 100
−
−
MHz
ICBO
collector-base cut-off current
VCB = 50 V; IE = 0
−
−
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
1
µA
VCE = 30 V; IB = 0; Tj = 150 °C
−
−
50
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
120
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA
80
−
−
VCEsat
saturation voltage
IC = 10 mA; IB = 0.5 mA
−
−
150
mV
Vi(off)
input off voltage
VCE = 5 V; IC = 100 µA
−
0.9
0.5
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 2 mA
2
1.1
−
V
R1
input resistor
15.4
22
28.6
kΩ
R2
------R1
resistor ratio
1.7
2.1
2.6
Cc
collector capacitance
−
−
2.5
TR2 (NPN)
VCB = 10 V; IE = ie = 0; f = 1 MHz
Note
1. Device mounted on an FR4 printed-circuit board.
APPLICATION INFORMATION
1
handbook, halfpage
6
2
RBE(ext)
RB(ext)
3
R1
5
R2
4
MHC322
Fig.2 Typical power management circuit.
2002 Nov 07
4
pF
NXP Semiconductors
Product data sheet
PNP general purpose transistor; NPN
resistor-equipped transistor
PUMF12
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
v M A
4
5
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
2002 Nov 07
REFERENCES
IEC
JEDEC
EIAJ
SC-88
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
PNP general purpose transistor; NPN
resistor-equipped transistor
PUMF12
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Nov 07
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp7
Date of release: 2002 Nov 07
Document order number: 9397 750 10311
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