Datasheet

SSF4N60F
Main Product Characteristics:
VDSS
600V
RDS(on)
1.9Ω(typ.)
ID
4A
TO-220F
Features and Benefits:


Marking and pin
Schematic diagram
Assignment
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature



Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
4
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
2.5
IDM
Pulsed Drain Current②
16
Power Dissipation③
33
W
Linear Derating Factor
0.26
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=27.5mH
220
mJ
IAS
Avalanche Current @ L=27.5mH
4
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
A
page 1 of 8
SSF4N60F
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
3.79
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
600
—
—
—
1.9
2.1
—
4.63
—
2
—
4
—
2.28
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
17.8
—
Qgs
Gate-to-Source charge
—
3.7
—
Qgd
Gate-to-Drain("Miller") charge
—
7.1
—
VGS = 10V
td(on)
Turn-on delay time
—
10.9
—
VGS=10V, VDS=300V,
tr
Rise time
—
16.3
—
td(off)
Turn-Off delay time
—
40.0
—
tf
Fall time
—
31.8
—
ID=4A
Ciss
Input capacitance
—
537
—
VGS = 0V
Coss
Output capacitance
—
59
—
Crss
Reverse transfer capacitance
—
6
—
Ω
V
μA
nA
VGS = 0V, ID = 250μA
VGS=10V,ID = 2A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 600V,VGS = 0V
TJ = 125℃
VGS =30V
VGS = -30V
ID = 4A,
nC
ns
pF
VDS=480V,
RL=75Ω,
RGEN=25Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
4
A
—
—
16
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.87
1.3
V
IS=4A, VGS=0V
trr
Reverse Recovery Time
—
311.6
—
ns
TJ = 25°C, IF =4A, di/dt =
Qrr
Reverse Recovery Charge
—
2476
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
page 2 of 8
SSF4N60F
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
page 3 of 8
SSF4N60F
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2013.03.21
www.silikron.com
Version : 1.1
page 4 of 8
SSF4N60F
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
page 5 of 8
SSF4N60F
Mechanical Data:
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP1
ФP2
ФP3
L
L1
L2
Q1
Q2
b1
b2
b3
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
3o
5o
7o
o
o
43
45
47o
1.180
1.280
1.380
0.760
0.800
0.840
1.420
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
3o
43o
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
5o
45o
0.050
0.031
-
Version : 1.1
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
7o
47o
0.054
0.033
0.056
page 6 of 8
SSF4N60F
Ordering and Marking Information
Device Marking: SSF4N60F
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO220F
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
page 7 of 8
SSF4N60F
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
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11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.03.21
www.silikron.com
Version : 1.1
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