Datasheet

SSF8N80ZF Main Product Characteristics:
VDSS
800V
RDS(on)
1.1Ω (typ.)
ID
8A
TO-220F Marking and pin
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
ESD Rating(HBM) :4KV
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Schematic diagram Assignment Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications. Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
8
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
5.1
IDM
Pulsed Drain Current②
32
Power Dissipation③
45
W
Linear Derating Factor
0.36
W/°C
VDS
Drain-Source Voltage
800
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=25mH
320
mJ
IAS
Avalanche Current @ L=25mH
5
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com Version : 1.0
A
page 1 of 9
SSF8N80ZF
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
2.78
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
100
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
800
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
gfs
Typ.
Max.
Units
—
—
V
VGS = 0V, ID = 250μA
—
1.2
1.4
Ω
VGS=10V,ID = 4A
2
—
4
V
VDS = VGS, ID = 250μA
—
—
1
—
—
50
— — 10
— — -10
Forward Transconductance
—
16
—
Qg
Total gate charge
— 48
—
Qgs
Gate-to-Source charge
— 8
—
Qgd
Gate-to-Drain("Miller") charge
— 18
—
td(on)
Turn-on delay time
— 25
—
tr
Rise time
— 43
—
td(off)
Turn-Off delay time
— 125
—
tf
Fall time
— 62
—
Ciss
Input capacitance
— 2050
—
Coss
Output capacitance
— 150
—
Crss
Reverse transfer capacitance
— 20
—
μA
μA
S
Conditions
VDS = 800V,VGS = 0V
TJ = 125℃
VGS =20V
VGS = -20V
Vds>2Id*Rdson.max.
Id=8A
ID = 8A,
nC
VDS= 400V,
VGS = 10V
VGS=10V, VDS=400V,
ns
RGEN=25Ω
ID=8A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
—
—
8
A
—
—
32
A
1.5
V
IS=9A, VGS=0V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
trr
Reverse Recovery Time
—
550
—
ns
TJ = 25°C, IF =8A, di/dt =
Qrr
Reverse Recovery Charge
—
3600
—
nC
100A/μs
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com Version : 1.0
page 2 of 9
SSF8N80ZF
Test circuits and Waveforms
Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com Version : 1.0
page 3 of 9
SSF8N80ZF
Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 2. Gate to source cut-off voltage
2015.01.09
www.silikron.com Figure 4: Normalized On-Resistance Vs. Case
Temperature
Version : 1.0
page 4 of 9
SSF8N80ZF
Typical electrical and thermal characteristics
Figure 5: Typical Transfer Characteristics Figure 6. Maximum Power Dissipation Vs.
Case Temperature
Figure 7. Gate Charge Vs. Drain-to-Source
Voltage
©Silikron Semiconductor CO.,LTD.
Figure 8: Typical Body Diode Transfer
Characteristics
2015.01.09
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SSF8N80ZF
Typical electrical and thermal characteristics Figure 9. Maximum Drain Current Vs. Case
Temperature
Figure 10.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2015.01.09
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SSF8N80ZF
Mechanical Data:
TO220F PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
A3
B1
B2
B3
C
C1
C2
D
D1
D2
D3
E
E1
E2
E3
E4
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
7.000
3.080
3.180
3.280
9.260
9.460
9.660
15.670
15.870
16.070
4.500
4.700
4.900
6.480
6.680
6.880
3.200
3.300
3.400
15.600
15.800
16.000
9.550
9.750
9.950
2.54 (TYP)
1.470
0.700
0.800
0.900
0.250
0.350
0.450
2.340
0.450
2.560
ϴ
©Silikron Semiconductor CO.,LTD.
2.540
0.700
1.0*450
0.500
2.760
2.740
0.600
2.960
300
Dimension In Inches
Nom
0.400
0.000
0.125
0.372
0.625
0.185
0.263
0.130
0.622
0.384
1.00 (TYP)
0.028
0.031
0.010
0.014
Min
0.392
0.276
0.121
0.365
0.617
0.177
0.255
0.126
0.614
0.376
0.092
0.018
0.101
0.100
0.028
1.0*450
0.020
0.109
Max
0.408
0.000
0.129
0.380
0.633
0.193
0.271
0.134
0.630
0.392
0.058
0.035
0.018
0.108
0.024
0.117
300
2015.01.09
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page 7 of 9
SSF8N80ZF
Ordering and Marking Information
Device Marking: SSF8N80ZF
Package (Available)
TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO220F
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com Version : 1.0
page 8 of 9
SSF8N80ZF
ATTENTION:
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■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
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[email protected]
Technical Support:
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11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
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E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2015.01.09
www.silikron.com Version : 1.0
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