Datasheet

SSF2336
D
DESCRIPTION
The SSF2336 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 4.2A
RDS(ON) < 80mΩ @ VGS=2.5V
RDS(ON) < 45mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOT-23
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2336
SSF2336
SOT-23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
4.2
A
IDM
33
A
PD
1.25
W
TJ,TSTG
-55 To 150
℃
RθJA
140
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=250μA
1
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V
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SSF2336
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.2
V
Drain-Source On-State Resistance
RDS(ON)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
0.6
VGS=2.5V, ID=3.6A
50
80
mΩ
VGS=4.5V, ID=4.2A
35
45
mΩ
VDS=10V,ID=4A
8
S
700
PF
100
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
90
PF
Turn-on Delay Time
td(on)
7
nS
Turn-on Rise Time
tr
50
nS
26
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=10V, RL = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
td(off)
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
9
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
1.8
nC
VDS=10V,ID=4.2A,VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.3A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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SSF2336
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
toff
tf
td(off)
90%
Vout
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Normalized Effective Transient
Thermal Impedance
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
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SSF2336
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF2336
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
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