Datasheet

SSF3002EG1
Main Product Characteristics:
VDSS
30V
RDS(on)
1ohm(typ.)
ID
0.5A①
SOT23
Marking and pin
Schematic diagram
Assignment
Features andBenefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
ESD Protected, HBM 1KV






Description:
It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the
on-resistance with high repetitiveavalanche rating. These features combine to makethis design an extremely
efficient and reliable devicefor use in power switching applicationand a wide varietyof other applications
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
0.5 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
0.3 ①
IDM
Pulsed Drain Current②
PD @TC = 25°C
Power Dissipation
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
TJ
Operating Junction
TSTG
Storage Temperature Range
Units
A
3
0.7
W
30
V
± 20
V
-55 to + 150
°C
Thermal Resistance
Symbol
Characterizes
RθJA
Junction-to-ambient (t ≤ 10s)③
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Typ.
Max.
Units
—
180
℃/W
Preliminary Version: 1.0
page1of6
SSF3002EG1
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
30
—
—
V
VGS = 0V, ID = 250μA
RDS(on)
Static Drain-to-Source on-resistance
—
1
1.5
Ω
VGS=4.5V,ID = 0.2A
RDS(on)
Static Drain-to-Source on-resistance
—
2
3
Ω
VGS=2.5V,ID=0.2A
VGS(th)
Gate threshold voltage
0.7
—
1.4
—
0.63
—
IDSS
Drain-to-Source leakage current
—
—
1
—
—
50
IGSS
Gate-to-Source forward leakage
—
—
10
—
—
-10
Qg
Total gate charge
—
1.15
—
Qgs
Gate-to-Source charge
—
0.35
—
Qgd
Gate-to-Drain("Miller") charge
—
0.25
—
td(on)
Turn-on delay time
—
15
—
tr
Rise time
—
45
—
td(off)
Turn-Off delay time
—
65
—
tf
Fall time
—
65
—
Ciss
Input capacitance
—
20
—
Coss
Output capacitance
—
18
—
Crss
Reverse transfercapacitance
—
7
—
V
μA
μA
Conditions
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 30V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 0.1A,
nC
VDS=20V,
VGS = 4.5V
ns
VGS=4.5V, VDS =5V,
RGEN=50Ω,ID = 0.1A,
VGS = 0V,
pF
VDS =15V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
©Silikron Semiconductor CO.,LTD.
Min.
Typ.
Max.
Units
—
—
0.5 ①
A
—
—
3
A
—
0.72
1.2
V
2015.01.23
www.silikron.com
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=0.3A, VGS=0V
Preliminary Version: 1.0
page2of6
SSF3002EG1
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowablejunction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming amaximum junction temperature of TJ(MAX)=150°C.
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page3of6
SSF3002EG1
Mechanical Data:
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page4of6
SSF3002EG1
Ordering and Marking Information
Device Marking: 3002E
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
SOT23
3000
10
Units/Inner
Box
30000
Inner
Units/Carton
Boxes/Carton Box
Box
4
120000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj= 150℃ @ 80% of
Max VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
page5of6
SSF3002EG1
ATTENTION:
■Any and all Silikron products described or contained herein do not have specifications that can handle applications that
requireextremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
■Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
■ Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
■ Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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written permission of Silikron Semiconductor CO.,LTD.
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volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology
improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you
intend to use.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Preliminary Version: 1.0
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