Datasheet

2N7002K
GENERAL FEATURES
● VDS = 60V,ID = 0.3A
RDS(ON) < 3.5Ω @ VGS=5V
RDS(ON) < 3Ω @ VGS=10V
ESD Rating:1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S72K
2N7002K
SOT-23
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
0.3
ID (70℃)
0.26
IDM
0.8
A
PD
0.43
W
TJ,TSTG
-55 To 175
℃
RθJA
350
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
VGS=0V ID=250μA
BVDSS
1
60
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V
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2N7002K
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
IDSS
IGSS
VDS=60V,VGS=0V
1
μA
VGS=±5V,VDS=0V
100
nA
VGS=±10V,VDS=0V
150
nA
VGS=±20V,VDS=0V
10
uA
BVGSO
VDS=0V, IG=±250uA
±20
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
Drain-Source On-State Resistance
RDS(ON)
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
2.5
VGS=10V, ID=0.5A
3
VGS=5V, ID=0.05A
3.5
VDS=10V,ID=0.2A
V
Ω
0.08
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
30
PF
6
PF
3
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-Off Delay Time
td(off)
VDD=30V,VGS=10V,
RGEN=10Ω,RL=150Ω
ID=0.2A
Qg
VDS=10V,ID=0.25A,VGS=4.5V
VSD
VGS=0V,IS=0.2A
Total Gate Charge
0.4
25
nS
35
nS
0.6
nC
1.3
V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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2N7002K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
R gen
td(on)
Rl
Vin
D
ton
tr
td(off)
Vout
90%
VOUT
G
toff
tf
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
ID- Drain Current (A)
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(Ω )
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
©Silikron Semiconductor CO.,LTD.
Figure 6 Drain-Source On-Resistance
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ID- Drain Current (A)
Normalized On-Resistance
2N7002K
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω )
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
©Silikron Semiconductor CO.,LTD.
Figure 12 Source- Drain Diode Forward
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ID- Drain Current (A)
2N7002K
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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2N7002K
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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2N7002K
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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