Datesheet

SSF6072G5
Main Product Characteristics:
VDSS
60V
RDS(on)
67mΩ (typ.)
ID
4A
6072
SSF6072G5
SOT-223
Features and Benefits:


Marking and pin
Schematic diagram
Assignment
Advanced MOSFET process technology
Special designed for DC-DC and DC-AC
converters, load switching and general purpose
applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature



Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in DC-DC and DC-AC converters and a wide variety of other applications.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
4
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
3
IDM
Pulsed Drain Current②
16
PD @TC = 25°C
Power Dissipation③
3.3
W
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
15
mJ
IAS
Avalanche Current @ L=0.3mH
10
A
-55 to +175
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
RθJA
Characterizes
Typ.
Max.
Units
Junction-to-ambient (t ≤ 10s) ④
—
38
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
35
℃/W
©Silikron Semiconductor CO.,LTD.
2012.11.13
www.silikron.com
Version : 1.1
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SSF6072G5
Electrical Characterizes @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
gfs
unless otherwise specified
Min.
Typ.
Max.
Units
60
—
—
V
—
67
100
—
76
115
1
—
2.5
—
—
1
—
—
10
—
—
100
—
—
-100
Forward Transconductance
1
—
—
Qg
Total gate charge
—
12
—
Qgs
Gate-to-Source charge
—
3.5
—
Qgd
Gate-to-Drain("Miller") charge
—
3.7
—
td(on)
Turn-on delay time
—
9.2
—
tr
Rise time
—
16.7
—
td(off)
Turn-Off delay time
—
35.4
—
tf
Fall time
—
8.6
—
Ciss
Input capacitance
—
582
—
Coss
Output capacitance
—
49
—
Crss
Reverse transfer capacitance
—
36
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1.5A
mΩ
VGS=5V,ID = 1.5A
V
VDS = VGS, ID = 250μA
VDS = 60V,VGS = 0V
μA
TJ = 125°C
VGS =20V
nA
VGS = -20V
S
VDS = 15 V ID = 1.5A
ID = 4A,
nC
VDS=40V,
VGS =10V
VGS=10V, VDS=25V,
ns
RGEN=50Ω,ID = 1.2A,
VGS = 0V
pF
VDS = 30V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
©Silikron Semiconductor CO.,LTD.
Min.
Typ.
Max.
Units
—
—
4
A
—
—
16
A
—
—
1.5
V
2012.11.13
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Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=4A, VGS=0V
Version : 1.1
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SSF6072G5
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2012.11.13
www.silikron.com
Version : 1.1
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SSF6072G5
Typical electrical and thermal characteristics
Figure 1: Typical Capacitance Vs. Drain-to-Source Voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 2. Gate to source cut-off voltage
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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SSF6072G5
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Maximum Effective Transient Thermal
Temperature
Impedance, Junction-to-Case
Case Temperature
©Silikron Semiconductor CO.,LTD.
2012.11.13
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Version : 1.1
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SSF6072G5
Mechanical Data:
SOT-223 Dimensions in Millimeters (UNIT: mm)
Notes:
① Dimensions are inclusive of plating
② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
③ Dimension L is measured in gauge plane.
④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
2012.11.13
www.silikron.com
Version : 1.1
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SSF6072G5
Ordering and Marking Information
Device Marking: SSF6072G5
Package (Available)
SOT-223
Operating Temperature Range
C : -55 to 175ºC
Devices per Unit
Package
Type
Units/ Tube
Tubes/
Inner Box
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
SOT-223
2500pcs
2pcs
5000pcs
8pcs
40000pcs
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.11.13
www.silikron.com
Version : 1.1
page 7 of 8
SSF6072G5
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P.R. China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2012.11.13
www.silikron.com
Version : 1.1
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