Datasheet

SSFT4002
Main Product Characteristics:
VDSS
40V
RDS(on)
2.1 mohm
ID
220A
SSFT4002
SSFT3906
Features and Benefits:
TO220
Marking and pin
Schematic diagram
Assignment
Advanced trench MOSFET process technology
 Special designed for Convertors and power controls
 Ultra low on-resistance
 175℃ operating temperature
 High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications
Absolute max Rating:
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
220
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
145
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
85
IDM
Pulsed Drain Current①
850
PD @TC = 25°C
Power Dissipation
220
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
± 24
V
EAS
Single Pulse Avalanche Energy②
1200
mJ
IAS
Avalanche Current @ L=0.3mH
90
A
Operating Junction and
-55 to + 175
TJ
TSTG
Storage Temperature Range
Units
A
°C
300 (1.6mm from
Soldering Temperature, for 10 seconds
case )
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Value
Unit
0.62
℃/W
Junction-to-ambient ④
60
℃/W
Junction-to-Ambient (PCB mounted, steady-state)⑤
40
℃/W
Junction-to-case
©Silikron Semiconductor CO.,LTD.
2010.09.03
www.silikron.com
Version : 1.1(preliminary)
page
1of6
SSFT4002
Electrical Characterizes @TA=25℃ unless otherwise specified
Parameter
Min.
Typ.
Max
Units
Conditions
BVDSS
Drain-to-Source breakdown voltage
40
—
—
V
VGS = 0V, ID = 250μA
RDS(on)
Static Drain-to-Source on-resistance
—
2.1
2.5
mΩ
VGS = 10V, ID = 30A③
VGS(th)
Gate threshold voltage
2
—
4
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
10
—
—
150
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
220
—
Qgs
Gate-to-Source charge
—
56
—
Qgd
Gate-to-Drain("Miller") charge
—
56
—
td(on)
Turn-on delay time
—
33
—
tr
Rise time
—
133
—
td(off)
Turn-Off delay time
—
120
—
tf
Fall time
—
80
—
Ciss
Input capacitance
—
15300
—
Coss
Output capacitance
—
1290
—
Crss
Reverse transfer capacitance
—
306
—
IGSS
VDS = 40V, VGS = 0V
μA
VDS = 40V, VGS = 0V, TJ =
125°C
nA
VGS = 24V
VGS = -24V
nC
ns
pF
ID = 75A VDS = 32V VGS =
10V③
VDD = 20V ID = 75A RG = 3.0
Ω VGS = 10V③
VGS = 0V VDS = 25V ƒ =
1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Min.
Typ.
Max
Units
Continuous
Source
Current
(Body Diode)
MOSFET symbol
—
—
showing the
75
integral reverse
A
ISM
Pulsed
VSD
Diode Forward
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ton
—
—
750
—
0.85
1.3
V
45
ns
TJ = 25°C, IS = 75A, VGS = 0V③
①
Voltage
trr
p-n junction diode.
Source
Current (Body
Diode)
Conditions
—
37
TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs③
TJ = 25°C, IF = 65A, VDD = 20V di/dt = 100A/μs③
—
Forward Turn-on
Time
©Silikron Semiconductor CO.,LTD.
36
55
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2010.09.03
www.silikron.com
Version : 1.1(preliminary)
page
2of6
SSFT4002
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS:
1000
1000
10v
6v
5.5v
5v
100
4.5v
380us pulse width
5.5v
5v
100
4.5v
380us pulse width
O
Tj=150OC
Tj=25 C
10
10
0.1
1
10
100
0.1
1
Vds,Drain-to-Source Voltage(V)
10
100
Vds,Drain-to-Source Voltage(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
10000.00
8000.00
Vgs =0V,f=1MHZ
Ciss= Cgs + Cgd,Cds Shorted
Crss= Cgd
Coss= Cds + Cgd
7000.00
6000.00
5000.00
4000.00
Coss
3000.00
2000.00
Crss
1000.00
Tj=25C
Id, Drain-to-Source Current (A)
Ciss
9000.00
C,Capacitance(pF)
6v
10v
15v
Id,Drain-to-Source Curent(A)
Id,Drain-to-Source Curent(A)
15v
Tj=175C
100
0.00
1
10
100
4
5
6
7
8
9
10
Vds,Drain-to-Source Voltage(V)
Vgs, Gate-to-Source Voltage (V)
Fig 3. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 4. Typical Transfer Characteristics
1000
Id, Drain Current (A)
Rds(on)
Limited
100
Id(A) @Pw =10ms
Id(A) @Pw =1ms
Id(A) @Pw =100us
10
Id(A) @Pw =10us
Tj, (Max)=175℃
Ta=25℃
Single Pulse
1
1
10
100
Vds, Drain-Source Voltage (V)
Fig 5. Maximum Drain Current Vs. Case Temperature
Fig 6. SOA, Safe Operation Area
Temperature
Case Temperature
Case Temperature
©Silikron
Semiconductor CO.,LTD.
2010.09.03
www.silikron.com
Version : 1.1(preliminary)
page
3of6
SSFT4002
1000
Isd,Reverse Drain Current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
2
Id=75A
Vgs=10V
1.5
1
0.5
-60
-40
-20
0
20
40
60
80
100 120
140
160
180
Tj,Junction Temperature(°C)
Fig 7. Normalized On-Resistance Vs. Temperature
Tj=175C
100
10
Tj=25C
1
Vgs=0v
0.1
0.4
0.6
0.8
1
1.2
Vsd.Source-to-Drain Voltage(V)
Fig 8. Typical Source-Drain Diode Forward Voltage
Vs. Temperature Temperature
Case Temperature
Zthjc, Transient Thermal Response (C/W)
10
1
Zthjc
Zthjc
Zthjc
Zthjc
Zthjc
Zthjc
Zthjc
Zthjc
Zthjc
Zthjc
0.1
0.01
@
@
@
@
@
@
@
@
@
@
D=0.9
D=0.7
D=0.5
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
Duty Cycle, D=t1 / t2
Tj,max=Pdm*Zthjc+Tc
0.001
0.00001
0.0001
0.001
0.01
t1, Pulse Duration Time (sec)
0.1
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case.
Case Temperature
©Silikron Semiconductor CO.,LTD.
2010.09.03
www.silikron.com
Version : 1.1(preliminary)
page
4of6
SSFT4002
Notes:
①Repetitive rating; pulse width limited by max. junction temperature.
②Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 82A, VGS =10V. Part not
recommended for use above this value.
③Pulse width < 1.0ms; duty cycle<2%.
④This is only applied to TO-220 package.
⑤for D2-PAK package, When mounted on 1" square PCB ( FR-4 or G-10 Material ).
©Silikron Semiconductor CO.,LTD.
2010.09.03
www.silikron.com
Version : 1.1(preliminary)
page
5of6
SSFT4002
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
-
ФP1
e
L
1.500
2.54BSC
13.100
Symbol
ϴ1
ϴ2
12.900
-
ϴ3
-
ϴ4
-
©Silikron Semiconductor CO.,LTD.
E1
Min
0.087
0.050
0.390
-
13.300
-
0.508
-
3
-
5
30
-
10
0
7
70
0
2010.09.03
www.silikron.com
0
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.516
0
7
70
0.524
-
0
7
90
30
50
Version : 1.1(preliminary)
page
6of6
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