Datasheet

SSF20NS60
Main Product Characteristics:
VDSS
600V
RDS(on)
170mΩ(typ.)
ID
20A
TO220
Features and Benefits:
Marking and pin
Schematic diagram
Assignment
Feathers:

High dv/dt and avalanche capabilities

100% avalanche tested

Low input capacitance and gate charge

Low gate input resistance
Description:
The SSF20NS60 series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process.
this new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
20
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
13
IDM
Pulsed Drain Current②
80
Power Dissipation③
208
W
Linear Derating Factor
1.4
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=13.8mH
248
mJ
IAR
Avalanche Current @ L=13.8mH
6
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
©Silikron Semiconductor CO.,LTD.
2012.05.08
www.silikron.com
Version : 1.2
A
page 1 of 8
SSF20NS60
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
0.6
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
600
—
—
—
170
190
—
475
—
2
—
4
—
2.40
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
50.58
—
Qgs
Gate-to-Source charge
—
11.71
—
Qgd
Gate-to-Drain("Miller") charge
—
21.63
—
VGS = 10V
td(on)
Turn-on delay time
—
15.42
—
VGS=10V, VDS=380V,
tr
Rise time
—
44.80
—
td(off)
Turn-Off delay time
—
30.92
—
tf
Fall time
—
40.36
—
ID=18A
Ciss
Input capacitance
—
1514
—
VGS = 0V
Coss
Output capacitance
—
57.44
—
Crss
Reverse transfer capacitance
—
8.43
—
mΩ
V
μA
nA
VGS = 0V, ID = 250μA
VGS=10V,ID = 13A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 20A,
nC
ns
pF
VDS=480V,
RL=18Ω,
RGEN=3.38Ω
VDS = 25V
ƒ = 500KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
20
A
—
—
80
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.87
1.3
V
IS=20A, VGS=0V
trr
Reverse Recovery Time
—
370
—
ns
TJ = 25°C, IF =20A, di/dt =
Qrr
Reverse Recovery Charge
—
5
—
uC
100A/μs
©Silikron Semiconductor CO.,LTD.
2012.05.08
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Version : 1.2
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SSF20NS60
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
©Silikron Semiconductor CO.,LTD.
2012.05.08
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Version : 1.2
page 3 of 8
SSF20NS60
Typical electrical and thermal characteristics
Figure 1: Power
dissipation
Figure 2. Typ. Gate to source cut-off voltage
Figure 3. Typ. gate charge
©Silikron Semiconductor CO.,LTD.
Figure 4: Typ. Capacitances
2012.05.08
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Version : 1.2
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SSF20NS60
Typical electrical and thermal characteristics
Figure 5. Drain-source breakdown voltage
©Silikron Semiconductor CO.,LTD.
Figure 6. Drain-source on-state resistance
2012.05.08
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Version : 1.2
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SSF20NS60
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
3.000
1.750
3.100
1.850
0.114
0.065
0.118
0.069
0.122
0.073
0.900
1.000
1.100
0.035
0.039
0.043
50
70
90
50
70
90
Q2
Q3
0
5
50
0
7
70
0
9
90
0
5
50
0
7
70
90
90
Q4
10
30
50
10
30
50
L4
Q1
©Silikron Semiconductor CO.,LTD.
2012.05.08
www.silikron.com
Version : 1.2
page 6 of 8
SSF20NS60
Ordering and Marking Information
Device Marking: SSF20NS60
Package (Available)
TO220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
TO220
50
Tubes/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.05.08
www.silikron.com
Version : 1.2
Units/Carton
Box
6000
page 7 of 8
SSF20NS60
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
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Any and all information described or contained herein are subject to change without notice due to
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2012.05.08
www.silikron.com
Version : 1.2
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