Datasheet

SSF8N60
Features
■
■
VDSS = 600V
Extremely high dv/dt capability
Low Gate Charge Qg results in Simple Drive Requirement
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatability
ID = 8A
Rdson = 0.85Ω (typ.)
Description
The SSF8N60 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
Application
SSF8N60 TOP View (TO220)
■
High current, high speed switching
■
Ideal for off-line power supply, adaptor, PFC
Absolute Maximum Ratings
Parameter
Max.
[email protected]=25 ْC
Continuous Drain Current,[email protected]
8.2
[email protected]=100ْC
Continuous Drain Current,[email protected]
5.5
IDM
Pulsed Drain Current
[email protected]=25ْC
VGS
①
Units
A
32.8
Power Dissipation
145
W
Linear derating Factor
0.8
W/ C
ْ
Gate-to-Source Voltage
±30
V
586
mJ
4
A
15
mJ
4.5
V/ns
–55 to +150
ْC
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
②
①
①
③
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
0.86
RθCS
Case-to-Sink,Flat,Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62.5
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
Units
ْC/W
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SSF8N60
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source Breakdown Voltage
600
—
—
V
VGS=0V,ID=250μA
Breakdown Voltage Temp.Coefficient
—
0.6
—
V/ْC
Reference to 25ْC,ID=250μA
RDS(on)
Static Drain-to-Source On-resistance
—
0.85
1.1
Ω
VGS=10V,ID=3.8A ④
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
gfs
Forward Transconductance
—
6.4
—
S
VDS=40V,ID=3.8A
IDSS
Drain-to-Source Leakage current
—
—
1
—
—
10
Gate-to-Source Forward leakage
—
—
0.5
Gate-to-Source Reverse leakage
—
—
-0.5
Qg
Total Gate Charge
—
28.5
15
Qgs
Gate-to-Source charge
—
7
—
Qgd
Gate-to-Drain("Miller") charge
—
14.6
—
td(on)
Turn-on Delay Time
—
29
70
tr
Rise Time
—
78
160
td(off)
Turn-Off Delay Time
—
65
130
tf
Fall Time
—
60
128
Ciss
Input Capacitance
—
1000
1350
Coss
Output Capacitance
—
125
165
Crss
Reverse Transfer Capacitance
—
16
21
V(BR)DSS
△ V(BR)DSS/
△ TJ
IGSS
Max. Units
uA
Test Conditions
VDS=600V,VGS=0V
VDS=480V,VGS=0V,TJ=150ْC
VGS=30V
uA
VGS=-30V
ID=7.5A
nC
VDS=480V
VGS=10V
VDD=300V
nS
ID=7.5A
RG=25Ω
VGS=0V
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Min.
Typ.
Max.
—
—
8.2
Units
MOSFET symbol
A
—
—
32.8
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
Trr
Reverse Recovery Time
—
300
—
nS
Qrr
Reverse Recovery Charge
—
1.8
uC
TJ=25ْC,IS=7.2A,VGS=0V
④
TJ=25ْC,IF=7.2A
di/dt=100A/μs
④
Notes:
① Repetitive rating; pulse width limited by maximum. junction temperature
② L = 23.5mH, IAS =6.5A, VDD = 50V, RG = 25ΩStarting, TJ = 25°C
③ ISD≤4A, di/dt≤200A/μs, VDD≤V(BR)DSS, TJ≤25°C
④ Pulse width≤300μS; duty cycle≤2%
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page
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SSF8N60
Typical Performance Characteristics
Figure 2 Transfer Characteristics
Figure 1 On-Region Characteristics
Figure 3 On-Resistance Variation vs. Drain
Figure 4 Body diode forward Voltage Variation
Current and Gate Voltage
Characteristics
vs. Source Current and temperature
Characteristics
Figure 6 Gate Charge Characteristics
Figure 5 Capacitance Characteristics
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page
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SSF8N60
Typical Performance Characteristics
Figure 7 Breakdown Voltage Variation
Figure 8 On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 10 Maximum Drain Current vs.
Figure 9 Maximum Safe Operation Area
Case Temperature
Figure 12 Transient Thermal Response Curve
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page
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SSF8N60
Test Circuit and Waveform
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page
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SSF8N60
TO-220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page
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