Datasheet

SSF11NS65 Main Product Characteristics:
VDSS
680V
RDS(on)
0.36ohm(typ.)
ID
11A
TO220 Features and Benefits:
Marking and pin
Schematic diagram Assignment Feathers:
„
High dv/dt and avalanche capabilities
„
100% avalanche tested
„
Low input capacitance and gate charge
„
Low gate input resistance
Description:
The SSF11NS65 series MOSFETs is a new technology. which combines an innovative super junction
technology and advance process. this new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
11
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
7
IDM
Pulsed Drain Current②
44
Power Dissipation③
162
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
680
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.5mH
281
mJ
IAS
Avalanche Current @ L=22.5mH
5
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 150
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com Version : 1.1
A
page 1 of 8
SSF11NS65
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.77
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
Conditions
680
—
—
—
0.36
0.41
—
0.88
—
2
—
4
—
2.46
—
—
—
1
—
—
50
— — 100
-100 — —
Total gate charge
— 28.41
—
Qgs
Gate-to-Source charge
— 6.64
—
Qgd
Gate-to-Drain("Miller") charge
— 12.34
—
VGS = 10V
td(on)
Turn-on delay time
— 12.85
—
VGS=10V, VDS=300V,
tr
Rise time
— 9.45
—
td(off)
Turn-Off delay time
— 30.40
—
tf
Fall time
— 6.30
—
ID=5.5A
Ciss
Input capacitance
— 824.8
—
VGS = 0V
Coss
Output capacitance
— 78.06
—
Crss
Reverse transfer capacitance
— 2.75
—
Ω
V
μA
nA
VGS = 0V, ID = 250μA
VGS=10V,ID = 5.5A
TJ = 125℃
VDS = VGS, ID = 250μA
TJ = 125℃
VDS =650V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 11A,
nC
ns
pF
VDS=480V,
RL=54.5Ω,
RGEN=4.7Ω
VDS = 50V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
11
A
—
—
44
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.5
V
IS=11A, VGS=0V
trr
Reverse Recovery Time
—
313
—
ns
TJ = 25°C, IF =11A, di/dt =
Qrr
Reverse Recovery Charge
—
2.98.
—
uC
100A/μs
©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com Version : 1.1
page 2 of 8
SSF11NS65
Test circuits and Waveforms
Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com Version : 1.1
page 3 of 8
SSF11NS65
Typical electrical and thermal characteristics
Figure 1: Power dissipation Figure 2. Typ. Gate to source cut‐off voltage
Figure 3. Typ. gate charge ©Silikron Semiconductor CO.,LTD.
Figure 4: Typ. Capacitances 2011.07.20
www.silikron.com Version : 1.1
page 4 of 8
SSF11NS65
Typical electrical and thermal characteristics Figure 5. Drain‐source breakdown voltage Figure 6. Drain‐source on‐state resistance ©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com Version : 1.1
page 5 of 8
SSF11NS65
Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
0
5
0
1
©Silikron Semiconductor CO.,LTD.
0
7
0
3
0
9
0
5
2011.07.20
www.silikron.com Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
0.141
0.107
0
5
0
1
Dimension In Inches
Nom
0.179
0.051
0.106
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
0.248
0.510
0.073REF
0.142
0.110
0.008
0
7
0
3
Version : 1.1
Max
0.185
0.052
0.110
0.035
0.054
0.020
0.362
0.020
0.404
0.063
0.256
0.519
0.156
0.143
0.113
0
9
0
5
page 6 of 8
SSF11NS65
Ordering and Marking Information
Device Marking: SSF11NS65
Package (Available)
TO220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Packag
e Type
Units/Tu Tubes/Inner
be
Box
TO220
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com Version : 1.1
Units/Carton
Box
6000
page 7 of 8
SSF11NS65
ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
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Any and all information described or contained herein are subject to change without notice due to
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without notice.
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
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11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com Version : 1.1
page 8 of 8
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